Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering
Репозиторій DSpace/Manakin
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| dc.contributor.author | Pidkova, V. | |
| dc.contributor.author | Brodnikovska, I. | |
| dc.contributor.author | Duriagina, Z. | |
| dc.contributor.author | Petrovskyy, V. | |
| dc.date.accessioned | 2017-06-04T13:48:57Z | |
| dc.date.available | 2017-06-04T13:48:57Z | |
| dc.date.issued | 2014-12-12 | |
| dc.identifier.citation | Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering / V.Pidkova, I.Brodnikovska, Z.Duriagina, V.Petrovskyy // Functional Materials. — 2015. — Т. 22, № 1. — С. 34-39. — Бібліогр.: 8 назв. — англ. | uk_UA |
| dc.identifier.issn | 1027-5495 | |
| dc.identifier.other | DOI: http://dx.doi.org/10.15407/fm22.01.034 | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/119115 | |
| dc.description.abstract | Dielectric layers of Al₂O₃, MgO, AlN and TiO₂ were formed by using ion-plasma sputtering method. Their microstructure and electrophysical properties in the range of 20 - 400°C were investigated. The conductivity mechanism, depth of traps and losses mechanism were established. The ohmic contact formation was revealed in TiO₂/40X13 system through which an injection of charge carries from the alloy into the dielectric layer occurs and its contribution to the electric equivalent circuit of substitution was assessed. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | НТК «Інститут монокристалів» НАН України | uk_UA |
| dc.relation.ispartof | Functional Materials | |
| dc.subject | Characterization and properties | uk_UA |
| dc.title | Structure and properties of Mg, Al, Ti oxide and nitride layers formed by ion-plasma sputtering | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
