Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers
Репозиторій DSpace/Manakin
- Домашня сторінка
- →
- Фізико-технічні та математичні науки
- →
- Відділення фізики і астрономії
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11
- →
- Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 4
- →
- Переглянути статтю
JavaScript is disabled for your browser. Some features of this site may not work without it.
| dc.contributor.author | Solntsev, V.S. | |
| dc.contributor.author | Gorbanyuk, T.I. | |
| dc.contributor.author | Litovchenko, V.G. | |
| dc.contributor.author | Evtukh, A.A. | |
| dc.date.accessioned | 2017-06-03T05:12:45Z | |
| dc.date.available | 2017-06-03T05:12:45Z | |
| dc.date.issued | 2008 | |
| dc.identifier.citation | The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers / V.S. Solntsev, T.I. Gorbanyuk, V.G. Litovchenko, A.A. Evtukh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 381-384. — Бібліогр.: 24 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 07.07.Df, 68.43.Bc, 68.47.Fg | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/119080 | |
| dc.description.abstract | The adsorboelectric effect arising in multilayered semiconductor structures based on the porous Si with catalytically active Pd electrodes due to action of low concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is studied. The kinetic dependences of the change in output signals of the samples upon action of different concentrations of gas molecules are studied using the capacitancevoltage characteristic method. The isotherms of adsorption are derived. A physical model of the adsorption of hydrogen containing gases in these structures is proposed to explain the observed phenomena. | uk_UA |
| dc.description.sponsorship | This work was supported by Science and Technology Centre in Ukraine, Project № 3819, by National Academy of science, Project № 51 and № 25- 2008, by Ministry of Science and Еducation, Project № M175-2007. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
