Hall mobility of charge carriers in films of  (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2008, том 11
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Semicond. Physics Quantum Electronics & Optoelectronics, 2008, № 4
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dc.contributor.author	Hasanov, H.A.
dc.contributor.author	Murguzov, M.I.
dc.date.accessioned	2017-06-03T05:02:35Z
dc.date.available	2017-06-03T05:02:35Z
dc.date.issued	2008
dc.identifier.citation	Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon / H.A. Hasanov, M.I. Murguzov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 4. — С. 356-359. — Бібліогр.: 7 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 68.55.Ac, 73.50.Jt
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119069
dc.description.abstract	Presented paper is devoted to studying the methods to prepare epitaxial films of (PbX)₁₋x(Sm₂X₃)x − (X – S, Se, Te; x = 0.04) semiconductors and to examine the Hall mobility of charge carriers in these films. It is revealed that the derived dependences μH (T) for the samples on values of the exponential coefficient ν = 1.7-2.8 testify the temperature course of mobility in the majority of samples and can be explained via the dispersion of acoustic oscillations in the lattice and presence of a temperature dependence on the effective mass.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Hall mobility of charge carriers in films of (PbX)₁₋x (Sm₂X₃)x semiconductors formed on porous silicon	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA