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Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 2
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Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system
Інший ID:
PACS 61.43.Fs
Посилання:
Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system / V.V. Halyan, M.V. Shevchuk, G.Ye. Davydyuk, S.V. Voronyuk, A.H. Kevshyn, V.V. Bulatetsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 138-142. — Бібліогр.: 14 назв. — англ.
Дата:
2009
Переглядів:
753
Завантажень:
415
Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system
Анотація:
A region of glass formation was found during melt quenching from 1273 K in
the AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂. system. It is localized along the binary GeSe₂-
GeS₂ system. Characteristic parameters (Tg, Tc, Tm) were determined for the glassy
alloys, and Tgr and KG were calculated using them. The radial distribution functions were
calculated using the integral Fourier transformation based on X-ray scattering curves.
The average interatomic distances within the first and second coordination spheres were
determined.
