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dc.contributor.author |
Yaremchuk, I.Ya. |
|
dc.contributor.author |
Fitio, V.M. |
|
dc.contributor.author |
Bobitski, Ya.V. |
|
dc.date.accessioned |
2017-05-30T16:55:19Z |
|
dc.date.available |
2017-05-30T16:55:19Z |
|
dc.date.issued |
2008 |
|
dc.identifier.citation |
Selective unequal-thickness thin-film filters for IR spectral region / I.Ya. Yaremchuk, V.M. Fitio, Ya.V. Bobitski // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 1. — С. 23-25. — Бібліогр.: 11 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 42.25.Bs, 42.25.Hz, 42.79.Ci |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118585 |
|
dc.description.abstract |
A new five-layer structure of the dielectric interference filter for the infra-red
region of spectrum is investigated. The main spectral parameters of such a narrow-band
filter are determined. The dependence of the transmission band half-width on the
thickness of a dividing layer in this system is investigated. It is shown that, in the case of
the application of PbTe, GeTe, and SnTe layers with a given thickness; their number can
be limited to five at providing the necessary selectivity of the filter: practically the 100-%
transmission at the resonance frequency and 0.005 % outside the transmission band. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Selective unequal-thickness thin-film filters for IR spectral region |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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