Metrological aspects of researching the specific contact resistivity of ohmic contacts by using the four-contact method

dc.contributor.author	Sheremet, V.N.
dc.date.accessioned	2017-05-30T10:32:07Z
dc.date.available	2017-05-30T10:32:07Z
dc.date.issued	2014
dc.identifier.citation	Metrological aspects of researching the specific contact resistivity of ohmic contacts by using the four-contact method / V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 394-397. — Бібліогр.: 8 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 73.40.Ns, 73.40.Cg, 85.40.-e
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118426
dc.description.abstract	In this paper, we have considered the four-contact method for measurements of the specific contact resistivity of the ohmic contacts (ρc). The presented method for measuring ρc has been compared with several other methods. Limits of applying this method have been shown.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Metrological aspects of researching the specific contact resistivity of ohmic contacts by using the four-contact method	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA