Показати простий запис статті
dc.contributor.author |
Popovych, K.O. |
|
dc.date.accessioned |
2017-05-29T19:24:53Z |
|
dc.date.available |
2017-05-29T19:24:53Z |
|
dc.date.issued |
2007 |
|
dc.identifier.citation |
Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors / K.O. Popovych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 77-80. — Бібліогр.: 12 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 78.60.Fi, 71.15.Fv, 71.55.Gs |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118337 |
|
dc.description.abstract |
In this paper we present experimental results of the studying degradation
processes in electroluminescent panels, prepared from encapsulated ZnS:Cu powder
phosphors and theoretical simulation of energy parameters for the phosphor. Energy band
diagrams ZnS, Cu₂S, ZnS-Cu₂₋xS heterojunction and Cu-ZnS metal-semiconductor
junction have been constructed and cohesive energies for Zn-S, Cu-S, Zn-O, Cu-O and
Zn-Cu bonds have been calculated by the method based on a linear combination of
atomic orbitals and pseudo-potential. Time dependences of brightness have been found to
adequately fit a two-component exponential dependence. The first part of the exponential
curve has been attributed to the diffusion processes taking place in Cu₂₋xS, and the second
one to the diffusion of Cu in ZnS matrix. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
Файли у цій статті
Ця стаття з'являється у наступних колекціях
Показати простий запис статті