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dc.contributor.author |
Kovalyuk, Z.D. |
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dc.contributor.author |
Duplavyy, V.Y. |
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dc.contributor.author |
Sydor, O.M. |
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dc.date.accessioned |
2017-05-29T13:57:26Z |
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dc.date.available |
2017-05-29T13:57:26Z |
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dc.date.issued |
2012 |
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dc.identifier.citation |
Investigation of InS-InSe heterojunctions
prepared using sulphurization of p-InSe / Z.D. Kovalyuk, V.Y. Duplavyy, O.M. Sydor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 38-40. — Бібліогр.: 5 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS 73.40.Lq |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118249 |
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dc.description.abstract |
n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of the heterojunction were measured, and principal mechanisms of charge transfer were established. The spectrum of relative quantum efficiency of the heterojunction was measured. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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