Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10
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Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 3
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dc.contributor.author	Moscal, D.S.
dc.contributor.author	Fedorenko, L.L.
dc.contributor.author	Yusupov, M.M.
dc.contributor.author	Golodenko, M.M.
dc.date.accessioned	2017-05-28T18:01:26Z
dc.date.available	2017-05-28T18:01:26Z
dc.date.issued	2007
dc.identifier.citation	Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation / D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 80-83. — Бібліогр.: 14 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 71.10.-W
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118129
dc.description.abstract	We used the method of nets to calculate the thermoelastic stresses on the GaAs surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm) with diffraction spatial intensity modulation from a shield with rectangular cut. The structure of irradiated subsurface layers of samples was studied by the AFM method. A periodic islet structure formed in the process of diffusive redistribution of defects was revealed by the level-by-level chemical etching.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA