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періодичних видань НАН України
періодичних видань НАН України
Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 3
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| dc.contributor.author | Red’ko, R. | |
| dc.contributor.author | Red’ko, S. | |
| dc.date.accessioned | 2017-05-28T18:00:07Z | |
| dc.date.available | 2017-05-28T18:00:07Z | |
| dc.date.issued | 2007 | |
| dc.identifier.citation | Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers / R. Red'ko, S. Red'ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 75-76. — Бібліогр.: 5 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 61.71.-y, 71.55.-I | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/118127 | |
| dc.description.abstract | To study the influence of microwave irradiation on a spectrum of defect states in porous InP, we have measured the luminescence spectra within the range 0.50 to 2.04 eV at 77 K before and after short and long (up to 600 s) treatments in air in the operation chamber of a magnetron at a frequency of 2.45 GHz and a surface power density of 7.5 W/cm² . We have obtained that the spectra of defects in researched samples are essentially changed as well as the concentrations of local centers. Possible mechanisms of observable changes in the semiconductor impurity-defect composition caused by a microwave treatment are discussed. | uk_UA |
| dc.description.sponsorship | The authors are grateful to Drs. I.N. Arsent’ev and V.P. Ulin for the provision of samples and to Dr. V.V. Milenin for his permanent interest to our work and the fruitful discussions. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
