Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures

dc.contributor.author	Olikh, O.Ya.
dc.date.accessioned	2017-05-28T16:43:00Z
dc.date.available	2017-05-28T16:43:00Z
dc.date.issued	2003
dc.identifier.citation	Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures / O.Ya. Olikh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 450-453. — Бібліогр.: 14 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 72.50.+b
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118085
dc.description.abstract	The effects of microwave (2.45 GHz) treatment influence on the cross section for electron capture and the energy of the deep levels in the forbidden gap of GaAs monocrystals and n-n⁺ epitaxial structures have been investigated using acoustoelectric transient spectroscopy.	uk_UA
dc.description.sponsorship	The author would like to thank Prof. R.V. Konakova for helpful discussions.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Acoustoelectric transient spectroscopy of microwave treated GaAs-based structures	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA