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dc.contributor.author |
Talanin, V.I. |
|
dc.contributor.author |
Talanin, I.E. |
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dc.date.accessioned |
2017-05-28T16:39:55Z |
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dc.date.available |
2017-05-28T16:39:55Z |
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dc.date.issued |
2003 |
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dc.identifier.citation |
Classification of microdefects in semiconducting silicon / V.I. Talanin, I.E. Talanin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 431-436. — Бібліогр.: 40 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 61.72.Bb; 61.72.Ji; 61.72.Yx |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118081 |
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dc.description.abstract |
On the basis of experimental analysis (preferential etching, transmission electron microscopy) of the dislocation-free silicon single crystals grown by floating-zone method (FZ-Si) and Czochralski method (Cz-Si), a classification of grown-in microdefects was compiled. The suggested classification is founded on the heterogeneous formation mechanism of grown-in microdefects, which was justified earlier by us. The suggested classification is valid for crystals of either small or large diameter. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Classification of microdefects in semiconducting silicon |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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