Показати простий запис статті
dc.contributor.author |
Mustafaeva, S.N. |
|
dc.contributor.author |
Asadov, M.M. |
|
dc.contributor.author |
Qahramanov, K.Sh. |
|
dc.date.accessioned |
2017-05-27T12:19:23Z |
|
dc.date.available |
2017-05-27T12:19:23Z |
|
dc.date.issued |
2007 |
|
dc.identifier.citation |
Frequency-dependent dielectric coefficients of TlInS₂ amorphous films / S.N. Mustafaeva, M.M. Asadov, K.Sh. Qahramanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 58-61. — Бібліогр.: 11 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 71.20.Nr; 71.23.Cq; 71.55.Jv; 72.20.Ee; 72.30.+q; 73.20.At; 73.20.Hb |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/117916 |
|
dc.description.abstract |
The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac)
of amorphous films prepared by evaporation of TlInS₂ has been investigated at
frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > 10⁶ Hz, relaxation losses take
place. It is established that the hopping conduction near the Fermi level occurs in TlInS₂
amorphous films at frequencies up to 3⋅10⁶ Hz. The density of localized states at the
Fermi level, the mean time for phonon-assisted tunneling, and the hopping distance have been evaluated for polymorphic TlInS₂ films. For frequencies above 10⁷ Hz, σac( f ) ~ f₂.
Such a behavior is caused by optical transitions in TlInS₂ amorphous films. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Frequency-dependent dielectric coefficients of TlInS₂ amorphous films |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
Файли у цій статті
Ця стаття з'являється у наступних колекціях
Показати простий запис статті