Isothermal growth kinetics of CdxHg₁₋xTe LPE layers

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10
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Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 2
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dc.contributor.author	Moskvin, P.P.
dc.contributor.author	Khodakovsky, V.V.
dc.date.accessioned	2017-05-27T11:03:25Z
dc.date.available	2017-05-27T11:03:25Z
dc.date.issued	2007
dc.identifier.citation	Isothermal growth kinetics of CdxHg₁₋xTe LPE layers / P.P. Moskvin, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 29-33. — Бібліогр.: 15 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 64.90.+ b
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117889
dc.description.abstract	Within the diffusion-limited growth model, the kinetic analysis of the LPE process for CdxHg₁₋xTe solid solutions is carried out. It is assumed that a phase equilibrium exists on the interface, and the concentrations of components are connected by the equations of phase equilibria in the frame of the model of polyassociated solutions. These equations serve as the boundary conditions in solving the diffusion mass transfer problem. The developed thermodynamic model of growth allowed us to achieve the precision description of solid solutions, in particular to predict the regimes of the growth of layers with a given composition in the Cd-Hg-Te system.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Isothermal growth kinetics of CdxHg₁₋xTe LPE layers	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA