Overheating effect and hole-phonon interaction in SiGe heterostructures

dc.contributor.author	Berkutov, I.B.
dc.contributor.author	Andrievskii, V.V.
dc.contributor.author	Komnik, Yu.F.
dc.contributor.author	Myronov, M.
dc.contributor.author	Mironov, O.A.
dc.date.accessioned	2017-05-27T10:53:15Z
dc.date.available	2017-05-27T10:53:15Z
dc.date.issued	2008
dc.identifier.citation	Overheating effect and hole-phonon interaction in SiGe heterostructures / I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, M. Myronov, O.A. Mironov // Физика низких температур. — 2008. — Т. 34, № 11. — С. 1192-1196. — Бібліогр.: 14 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.other	PACS: 72.15.Lh;72.20.Ht;72.20.My
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117882
dc.description.abstract	The effect of the charge carriers overheating in a two-dimensional (2D) hole gas in a Si1–xGex quantum well, where x = 0.13; 0.36; 0.8, 0.95, has been realized. The Shubnikov–de Haas (SdH) oscillation amplitude was used as a «thermometer» to measure the temperature of overheated holes. The temperature dependence of the hole–phonon relaxation time was found using analysis of dependence of amplitude of SdH oscillations change on temperature and applied electrical field. Analysis of the temperature dependence of the hole–phonon relaxation time exhibits transition of 2D system from regime of «partial inelasticity» to conditions of small angle scattering.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	Низкоразмерные и неупорядоченные системы	uk_UA
dc.title	Overheating effect and hole-phonon interaction in SiGe heterostructures	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA