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dc.contributor.author |
Lev, S.B. |
|
dc.contributor.author |
Sugakov, V.I. |
|
dc.contributor.author |
Vertsimakha, G.V. |
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dc.date.accessioned |
2017-05-27T09:46:47Z |
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dc.date.available |
2017-05-27T09:46:47Z |
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dc.date.issued |
2007 |
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dc.identifier.citation |
Investigation of the direct/indirect exciton transition in the double quantum well system based on Cd₁₋yMgyTe/ Cd₁₋xMnxTe in applied magnetic field / S.B. Lev, V.I. Sugakov, G.V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 11-15. — Бібліогр.: 20 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS 72.25.-b, 75.75.+a |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/117863 |
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dc.description.abstract |
The energy levels, wave functions, and lifetimes of direct and indirect
excitons in a CdTe-based double quantum well system with non-magnetic (Mg) and
magnetic (Mn) ions in a magnetic field are found. It is shown that, in an external
magnetic field greater than some critical value, the lowest excited state of the system
becomes the indirect exciton state. Since the indirect exciton lifetime exceeds the direct
exciton one by a few orders of magnitude, the magnetic field can significantly influence
optical properties of the system (for example, the luminescence intensity). The realistic
range of parameters of a quantum well (well and barrier widths, Mn and Mg concentrations, the magnetic field strength), in which the exciton lowest state is the indirect exciton state, is calculated. |
uk_UA |
dc.description.sponsorship |
This work was supported by grant INTAS 03-51-5266. The authors wish to thank Dr. O.S. Zinets for the useful discussions. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Investigation of the direct/indirect exciton transition in the double quantum well system based on Cd₁₋yMgyTe/ Cd₁₋xMnxTe in applied magnetic field |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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