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періодичних видань НАН України
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Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1
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| dc.contributor.author | Trachevsky, V.V. | |
| dc.contributor.author | Steblenko, L.P. | |
| dc.contributor.author | Demchenko, P.Y. | |
| dc.contributor.author | Koplak, O.V. | |
| dc.contributor.author | Kuryliuk, A.M. | |
| dc.contributor.author | Melnik, A.K. | |
| dc.date.accessioned | 2017-05-26T17:59:31Z | |
| dc.date.available | 2017-05-26T17:59:31Z | |
| dc.date.issued | 2010 | |
| dc.identifier.citation | Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field / V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M. Kuryliuk, A.K. Melnik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 87-90. — Бібліогр.: 17 назв. — англ. | uk_UA |
| dc.identifier.isbn | PACS 61.43.Dq, 61.72.Dd, 68.35.Dv, 76.30.Mi | |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/117805 | |
| dc.description.abstract | In this work, the influence of weak magnetic field on structure-dependent properties of micro-structured Si was determined. The researches of EPR-spectra inherent to micro-structured Si showed the presence of the spectral line at H ~ 3500 Oe that appears from centers with the g-factor g ~ 2.0010 (Pв – centers). Intensity of the determined spectral line decreases twice after magnetic processing. The observed redox processes and evolution of defect structure are interpreted as the influence of magnetic field on micro-structured Si. Calculations made using the data of X-ray diffractometric researches showed an essential decrease of internal strains and respective increase of the lattice parameter in micro-structured Si samples after magnetic processing in the weak magnetic field. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
