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dc.contributor.author |
Severin, V.S. |
|
dc.date.accessioned |
2017-05-26T17:44:11Z |
|
dc.date.available |
2017-05-26T17:44:11Z |
|
dc.date.issued |
2011 |
|
dc.identifier.citation |
Influence of polarization of conduction electrons in semiconductor on their light absorption / V.S. Severin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 445-451. — Бібліогр.: 19 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 77.22.Ch, Ej; 78.20.Bh, Ci, -e |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/117795 |
|
dc.description.abstract |
The influence of polarization of conduction electrons in semiconductor on
their light absorption is examined. The Drude model is used for the description of an
electron motion inside conduction band. Account of electron screening the external
electric field essentially modifies the expression for the light absorption coefficient in
comparison with that in the traditional theory. As a result, the absorption spectrum
becomes “resonance” like. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Influence of polarization of conduction electrons in semiconductor on their light absorption |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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