Tunneling current via dislocations in InAs and InSb infrared photodiodes

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 4
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dc.contributor.author	Sukach, A.V.
dc.contributor.author	Tetyorkin, V.V.
dc.contributor.author	Krolevec, N.M.
dc.date.accessioned	2017-05-26T17:40:17Z
dc.date.available	2017-05-26T17:40:17Z
dc.date.issued	2011
dc.identifier.citation	Tunneling current via dislocations in InAs and InSb infrared photodiodes / A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 416-420. — Бібліогр.: 27 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.72.uj, Hh, Lk;73.40.Gk, Kp; 85.60.Dw
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117788
dc.description.abstract	Carrier transport mechanisms are investigated in InAs and InSb infrared photodiodes. The photodiodes were prepared by thermal diffusion of Cd and ion implantation of Be into InAs and InSb single-crystal substrates of n-type conductivity, respectively. The direct current was measured as a function of bias voltage and temperature. The excess tunneling current is observed in the investigated photodiodes at small forward bias voltages. Experimental proofs are obtained that dislocations are responsible for this current. A model for the tunneling current via dislocations is briefly discussed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Tunneling current via dislocations in InAs and InSb infrared photodiodes	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA