The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1
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dc.contributor.author	Belyaev, A.E.
dc.contributor.author	Boltovets, N.S.
dc.contributor.author	Kapitanchuk, L.M.
dc.contributor.author	Konakova, R.V.
dc.contributor.author	Kladko, V.P.
dc.contributor.author	Kudryk, Ya.Ya.
dc.contributor.author	Kuchuk, A.V.
dc.contributor.author	Lytvyn, O.S.
dc.contributor.author	Milenin, V.V.
dc.contributor.author	Korostinskaya, T.V.
dc.contributor.author	Ataubaeva, A.B.
dc.contributor.author	Nevolin, P.V.
dc.date.accessioned	2017-05-26T12:07:14Z
dc.date.available	2017-05-26T12:07:14Z
dc.date.issued	2010
dc.identifier.citation	The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts /A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, R.V. Konakova, V.P. Kladko, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, T.V. Korostinskaya, A.B. Ataubaeva, P.V. Nevolin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 8-11. — Бібліогр.: 14 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 85.30.De
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117698
dc.description.abstract	We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact resistivity increases with temperature; this is typical of metallic conductivity. We suggest that the ohmic contact is formed owing to appearance of shunts at Pd deposition on dislocations or other structural defects. The number of shunts per unit area is close to the measured density of structural defects at the metal-Si interface.	uk_UA
dc.description.sponsorship	This work was supported by the Government Goaloriented Scientific and Technical Program “The development and acquisition of microelectronic technologies, organization of serial production of devices and systems with them” 2008-2011. Decree of the Cabinet of Ministers of Ukraine No 1335 from November 21, 2007.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA