Features of a shock wave in CdTe by pulsed laser irradiation

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 1
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dc.contributor.author	Dauletmuratov, B.K.
dc.date.accessioned	2017-05-25T18:46:14Z
dc.date.available	2017-05-25T18:46:14Z
dc.date.issued	2011
dc.identifier.citation	Features of a shock wave in CdTe by pulsed laser irradiation / B.K. Dauletmuratov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 130-134. — Бібліогр.: 17 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.72.Lk, 61.80.Ba, -x
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117656
dc.description.abstract	Analyzed on the example of CdTe are formation and propagation of shock waves during pulsed laser irradiation of a solid surface. It is shown that before the appearance of a shock wave in a solid, a gradual increase in pressure gradient leads to formation of dislocations, density of which increases with depth. The dislocation density is maximum at the place of shock wave formation.	uk_UA
dc.description.sponsorship	The work was performed under the financial support of the State Fund for Fundamental Researches of Ukraine, project No F41.1/032 and State target scientific and technical program: project Nо І-2.1.1-08, state registration No 0108U003198 and No І-1.2.1-08, state registration No № 0108U004836..	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Features of a shock wave in CdTe by pulsed laser irradiation	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA