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періодичних видань НАН України
Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 1
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| dc.contributor.author | Lisovskyy, I.P. | |
| dc.contributor.author | Litovchenko, V.G. | |
| dc.contributor.author | Zlobin, S.O. | |
| dc.contributor.author | Voitovych, M.V. | |
| dc.contributor.author | Khatsevich, I.M. | |
| dc.contributor.author | Indutnyy, I.Z. | |
| dc.contributor.author | Shepeliavyi, P.E. | |
| dc.contributor.author | Kolomys, O.F. | |
| dc.date.accessioned | 2017-05-25T18:44:48Z | |
| dc.date.available | 2017-05-25T18:44:48Z | |
| dc.date.issued | 2011 | |
| dc.identifier.citation | Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films / I.P. Lisovskyy, V.G. Litovchenko, S.O. Zlobin, M.V. Voitovych, I.M. Khatsevich, I.Z. Indutnyy, P.E. Shepeliavyi, O.F. Kolomys // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 127-129. — Бібліогр.: 6 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 68.55.Ln, 78.30.Ap, 81.40.Ef | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/117655 | |
| dc.description.abstract | The effect of low-temperature annealing on light emitting properties of naSi/SiOx porous column-like nanocomposite films has been studied. Influence of type of chemically active gas or inert ambient on PL characteristics is shown. Existence of metastable defects in such structures is shown. A temperature interval for healing the metastable defects is defined. Mechanisms to reduce a non-radiative recombination channel depending on the gas ambient are proposed. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Effect of low-temperature annealing on light-emitting properties of na-Si/SiOx porous nanocomposite films | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
