ЗМІСТ

Deibuk V.G., Dremlyuzhenko S.G., Ostapov S.E.
Unstable mixing regions in II-VI quaternary solid solutions

Primachenko V.E., Kirillova S.I., Manoilov E.G., Kizyak I.M., Bulakh B.M., Chernobai V.A., Venger E.F.
Zn and Mn impurity effect on electron and luminescent properties of porous silicon

Jivani A.R., Trivedi H.J., Gajjar P.N., Jani A.R.
Some physical properties of Si_1-xGe_x solid solutions using pseudo-alloy atom model

Abouelaoualim D.
Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga_1-xAl_xAs superlattice

Gorbatyuk I.N., Zhikharevich V.V., Ostapov S.E.
Investigation of growing the Hg_1-x-y-zA_xB_yC_zTe solid solutions by modified zone melting method

Boichuk V.I., Bilynskyi I.V., Shakleina I.O.
Interband optical transitions in spherical nanoheterostructures

Sapaev B., Saidov A.S., Sapaev I.B.
p-n junctions obtained in (Ge₂)_x(GaAs)_1-x varizone solid solutions by liquid phase epitaxy

Halyan V.V., Davydyuk H.Ye., Parasyuk O.V., Kevshyn A.H.
The structure of glassy HgS–GeS₂

Primachenko V.E., Kirillova S.I., Venger E.F., Chernobai V.A.
Electron states at the Si–SiO₂ boundary (Review)

Odarych V.A., Sarsembaeva A.Z., Sizov F.F., Vuichyk M.V.
Investigation of cadmium telluride films on silicon substrate

Abouelaoualim D.
Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al_0.45Ga_0.55As superlattice

Belyaev A.E., Bobyl A.V., Boltovets N.S., Ivanov V.N., Konakova R.V., Konnikov S.G., Kudryk Ya.Ya., Markovskiy E.P., Milenin V.V., Rudenko E.M., Tereschenko G.F., Ulin V.P., Ustinov V.M., Tsirlin G.E., Shpak A.P.
Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

Kulish N.R., Lisitsa M.P., Malysh N.I.
Influence of polarization azimuth on twophoton absorption in CdS

Oleksenko P., Sorokin V., Zelinskyy R., Tytarenko P.
LC acousto-optical transducer for nondestructive holographic control systems

Kazantseva Z., Kislyuk V., Kozyarevych I., Lozovski V., Tretyak O.
Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field

Gentsar P.A., Vlasenko A.I., Kudryavtsev A.A.
Electron properties of semiconductor surface studied by the electroreflectance spectroscopy method

Boualleg A., Merabtine N., Benslama M.
Analysis of fractal radiation patterns from concentric-ring hexagonal arrays

Arsentyev I. N., Bobyl A.B., Konnikov S.G., Tarasov I.S., Ulin V.P, Shishkov M.V., Boltovets N.S., Ivanov V.N., Belyaev A.E., Konakova R.V., Kudryk Ya.Ya., Kamalov A.B., Lytvyn P.M., Markovskiy E.P., Milenin V.V., Red’ko R.A.
Porous nanostructured InP: technology, properties, application

Arsentyev I.N., Bobyl A.V., Tarasov I.S., Shishkov M.V., Boltovets N.S., Ivanov V.N., Kamalov A.B., Konakova R.V., Kudryk Ya.Ya., Lytvyn O.S., Lytvyn P.M., Markovskiy E.P., Milenin V.V.
New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis

Drozdov V.А., Pozhivatenko V.V., Drozdov М.А., Kovalchuk V.V., Moiseev L.M., Moiseeva V.O.
Polymorphism in chalcogenides of alkalineearth metals

Kidalov V.V., Beji L., Sukach G.A.
Optical properties of p-type porous GaAs