ЗМІСТ

Tripathy P.R., Mukherjee M., Pati S.P.
Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency

Elgomati H.A., Ahmad I., Salehuddin F., Hamid F.A., Zaharim A., Majlis B.Y., Apte P.R.
Optimal solution in producing 32-nm CMOS technology transistor with desired leakage current

Sharma J., Kumar S.
Role of Sb additive in the dielectric properties of Se₉₀In₁₀ and Se₇₅In₂₅ glassy alloys

Ivashchenko M.M., Opanasyuk A.S., Opanasyuk N.M., Danilchenko S.M., Starikov V.V.
Structural and optical characteristics of ZnSe and CdSe films condensed on non-oriented substrates

Kovalyuk Z.D., Khandozhko A.G., Lastivka G.I., Samila A.P.
The electric field gradient asymmetry parameter in InSe

Burbelo R., Isaiev M., Kuzmich A.
Photo-thermo-acoustic analysis of heterogeneous semiconductor structures under pulse laser irradiation

Bochkova T.M., Plyaka S.N.
Charge transport in bismuth orthogermanate crystals

Severin V.S.
Influence of polarization of free-electron system in semiconductor on the position of minimum in plasma light reflection

Javidi S., Enayati R., Iraj M., Aliakbari N.
Influence of Ca²⁺ ions on the habit of KDP crystals

Boiko I.I.
Influence of electron-electron drag on piezoresistance of n-Si

Balanetska V.O., Marchuk Yu., Karachevtsev A.V., Ushenko V.O.
Singular analysis of Jones-matrix images describing polycrystalline networks of biological crystals in diagnostics of cholelithiasis in its latent period

Dvoynenko M.M., Kazantseva Z.I., Strelchuk V.V., Kolomys O.F., Bortshagovsky E.G., Venger E.F., Tronc P.
Probing plasmonic system by the simultaneous measurement of Raman and fluorescence signals of dye molecules

Pavlovich I.I., Tomashik Z.F., Stratiychuk I.B., Tomashik V.M., Savchuk O.A., Kravtsova A.S.
Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions

Rana A.K., Chand N., Kapoor V.
Impact of sidewall spacer on gate leakage behavior of nano-scale MOSFETs

Boltovets P.M.
Effect of microwave radiation on optical characteristics of thin gold films

Gaidar G.P., Dolgolenko A.P., Litovchenko P.G.
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

Bushma A.V.
Information processing in an optoelectronic display system

Zabolotna N.I., Balanetska V.O., Telenga O.Yu., Ushenko V.O.
Wavelet analysis of Jones-matrix images corresponding to polycrystalline networks of biological crystals in diagnostics of tuberculosis

Akinlami J.O., Awobode A.M.
Photoemission study of the electronic structure of praseodymium filled skutterudite (PrOs₄Sb₁₂)

Bunak S.V., Ilchenko V.V., Melnik V.P., Hatsevych I.M., Romanyuk B.N., Shkavro A.G., Tretyak O.V.
Electrical properties of MIS structures with silicon nanoclusters

Bratus O.L., Evtukh A.A., Lytvyn O.S., Voitovych M.V., Yukhymchuk V.О.
Structural properties of nanocomposite SiO₂(Si) films obtained by ion-plasma sputtering and thermal annealing

Vovk V.E., Kovalchuk O.V., Gorishnyj M.P., Kovalchuk T.M.
Dielectric and electro-optical properties of solutions of chemically modified fullerene С60 in nematic liquid crystal