http://dspace.nbuv.gov.ua:80/handle/123456789/114628 Sun, 05 Apr 2026 16:53:42 GMT 2026-04-05T16:53:42Z http://dspace.nbuv.gov.ua:80/bitstream/id/341319/ http://dspace.nbuv.gov.ua:80/handle/123456789/114628 http://dspace.nbuv.gov.ua:80/handle/123456789/121458 On the collection of photocurrent in solar cells with a contact grid Sachenko, A.V.; Gorban, A.P. The exact solution for the dependence of specific power of photoconversion in the mode of maximum collected power on distance l between lines of the contact grid has been obtained. It is shown that in an optimized case, when the change of the potential of heavily doped front layer under contacts and between contacts is less than kT/q, the characteristic length L can be introduced with a meaning of the distance at which the photocurrent reduces by a factor of e due to recombination. Variation of the filling factor of SC IVC due to the presence of contact grid is then analytically expressed via this length. It is found that in unoptimized case, when the distance between contact strips l is much longer than L, the photocurrent collection is determined by lesser, as compared to L, distance, at which the front layer potential changes from the value of Vm under contacts to the open- circuit voltage between the contacts. In this case the change of IVC filling factor due to the presence of contact grid is expressed again analytically via this new characteristic length. In the intermediate case, when l ≈ L, the solution of the problem can be found by numerical methods only. Fri, 01 Jan 1999 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/121458 1999-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/119863 Thin films of organic molecular crystals (OMC) possessing type B lattice: spatial structure of dibenzotetraazaannulene film is related to its thickness Snopok, B.A.; Lampeka, Ya.D. Diffractometric and optical measurements showed that at considerable (>200 oK) difference between sublimation temperature and substrate one dibenzotetraazaannulene forms well oriented films structure of which depends on their thickness. This phenomena was explained by assuming that the temperature gradient inside the film can be changed during the evaporation. Therewith, both diffusion processes in clusters and the restructurization of small crystallites were suggested to be important components of OMC film formation mechanism. Fri, 01 Jan 1999 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/119863 1999-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/119862 Raman spectra of Ag- and Cu- photodoped chalcogenide films Stronski, A.V.; Vlcek, M.; Stetsun, A.I.; Sklenar, A.; Shepeliavyi, P.E. Raman spectra of the chalcogenide vitreous layers (As₄₀S₆₀, As₄₀S₄₀Se₂₀, As₄₀Se₆₀ ) non-doped and photodoped by Ag, Cu were measured. The spectra were analyzed in terms of a molecular model. It was ascertained, that for the spectra of photodoped As₄₀S₆₀, As₄₀S₄₀Se₂₀ layers, the shift of the main bands to the high frequency side and the appearance of the additional scattering bands in the low frequency spectral range are characteristic features. For the spectra of photodoped As₄₀S₆₀ layers, such shift and significant increase in scattering were not observed. Variations in the Raman spectra with photodoping by Ag or Cu are consistent with the supposition concerning normal covalent and coordinative bond formation between metal additives and chalcogen atoms. Fri, 01 Jan 1999 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/119862 1999-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/119861 Relaxation of photodarkening in SiO-As₂(S,Se)₃ composite layers Indutnyi, I.Z.; Shepeliavyi, P.E.; Indutnyi, V.I. Investigated in this work is the reversible photostimulated red absorption edge shift (photodarkening), ∆Eg, of As₂(S,Se)₃ nanoparticles embedded into the SiO matrix. As compared to continuous chalcogenide films, the remarkable ∆Eg increase (up to 4 times) with decreasing of chalcogenide particle sizes in composite SiO-As₂(S,Se)₃ layers was revealed. The exponential dependence of ∆Eg on storing time at different temperatures has been obtained. An activation energy of the transition of A₂2S₃ nanoparticles structure from a metastable photoexposed state to a ground annealed state is equal to 0.78 ± 0.06 eV. The effects are related to a spatial confinement of a photoexcited carrier diffusion length and an influence of particle sizes on intermediate-range order scale structure relaxation in the chalcogenide nanoparticles. Fri, 01 Jan 1999 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/119861 1999-01-01T00:00:00Z