http://dspace.nbuv.gov.ua:80/handle/123456789/114624 Sun, 12 Apr 2026 18:19:52 GMT 2026-04-12T18:19:52Z http://dspace.nbuv.gov.ua:80/bitstream/id/341315/ http://dspace.nbuv.gov.ua:80/handle/123456789/114624 http://dspace.nbuv.gov.ua:80/handle/123456789/121179 Paraelectric properties of PbTe doped with Ga Tetyorkin, V.; Movchan, S. The static dielectric constant was investigated as a function of temperature and carrier concentration in In(Cu)/p-PbTe Schottky contacts. Single crystals of PbTe doped with Ga were used as substrates for preparation of the contacts. The static dielectric constant was found to obey the Curie-Weiss law with the negative Curie temperature for all samples investigated including those ones with the lowest values of the hole concentration. There is an evidence that the Curie temperature is dependent on the compensation state in doped PbTe. The increase of the compensation results in nonmonotonous dependence of the Curie temperature on carrier concentration. The effect of the foreign impurities and native defects on the static dielectric constant and Curie temperature is discussed. Sat, 01 Jan 2000 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/121179 2000-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/121178 Hot wall growth and properties of lead telluride films doped by germanium and gallium Lashkarev, G.V.; Radchenko, M.V.; Slynko, E.I.; Vodopiyanov, V.N.; Asotsky, V.V.; Kaminsky, V.M.; Beketov, G.V.; Rengevich, E.V. The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology on barium fluoride substrate. A state of films surface was investigated by Atomic Force Microscope using both contact and taping modes. Hall coefficient, specific resistivity and thermoelectromotive force of films were measured in the temperature range 77-300 K. The investigation showed that the presence of germanium leads to an appearance of significant features on temperature dependencies of termoelectro-motive force which are connected with phase transition of displacement type. Doping gallium leads to n-type conductivity of films which increases with impurity concentration. The ionization energies of Ga impurities levels (n - exp(-E/2kT)) were within 3÷10 meV. The change of energy position and width of impurity level with increase of impurity concentration is established. The unusual protrusions on terraces of growth were discovered. The tops of protrusions can be considered as quantum dots. Inasmuch as composition of protrusions is expected to be distinguished from that of the terraces, they can create pieces of quantum wires. Sat, 01 Jan 2000 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/121178 2000-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/121177 Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors Venger, Ye.F.; Kolomoets, V.V.; Machulin, V.F. The manifestation of the low temperature plasticity (LTP) in highly uniaxially strained Ge and Si single crystals was deduced from analysis of the both tensoeffect measurements data and defect-selective etching patterns of specimens. An appearance of additional tensoeffect mechanisms after the LTP display we attribute to the generation of electrical active defects of crystalline structure when the applied stress exceed some critical one. We found that under LTP conditions the generated dislocation pile-ups are directly concentrated in the phase-boundary field of some structural imperfections of crystalline lattice. The interface model of LTP phenomenon in monocrystalline semiconductors was proposed for acceptable explanation of the dislocation generation in the initially dislocation-free crystals. Sat, 01 Jan 2000 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/121177 2000-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/121176 Thermoelectric properties of solid solutions based on tin telluride Freik, D.M.; Galushchak, M.O.; Ivanishin, I.M.; Shperun, V.M.; Zapukhlyak, R.I.; Pyts, M.V. The relation of a thermoelectric parameters of the solid solutions based on tin telluride: SnTe-MnTe, SnTe-Cu₂Te and SnTe-In₂Te₃: Pb versus an amount of dopant impurity are investigated. The crystaloquasichemical mechanism of the solid solutions formation are proposed. Showed is that at the expense of essential decreasing of a thermal conductivity factor in the solid solutions the improvement of the basic thermoelectric parameters of the material takes place. The compositions which have a maximum values of the thermoelectric Q-factor are retrieved. Sat, 01 Jan 2000 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/121176 2000-01-01T00:00:00Z