http://dspace.nbuv.gov.ua:80/handle/123456789/114616 Mon, 06 Apr 2026 13:39:23 GMT 2026-04-06T13:39:23Z http://dspace.nbuv.gov.ua:80/bitstream/id/341307/ http://dspace.nbuv.gov.ua:80/handle/123456789/114616 http://dspace.nbuv.gov.ua:80/handle/123456789/119336 Optical and protective properties of different type diamond and diamond-like carbon films Semikina, T.V.; Shmyryeva, A.N. Comparative analyses of diamond and diamond like carbon film optical properties prepared by laser and chemical vapor deposition methods are represented in this work. It was obtained that DF and DLC films have optical properties enabling to use them as antireflection coatings for solar cells. Application of both film types as protective antireflection coatings for solar cells operating under Earth conditions has enabled to increase solar cell efficiency up to 19.5 %. Solar cell degradation characteristics when using DLC coatings under space radiation conditions are represented. It was obtained that application of DLC films prepared by chemical deposition method at self-bias voltage -300 V has allowed to considerably reduce short-circuit current degradation as compared with that of another protective coatings. Mon, 01 Jan 2001 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/119336 2001-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/119335 Study of postimplantation annealing of SiC Avramenko, S.F.; Kiselev, V.S.; Romanyuk, B.N.; Valakh, M.Ya. The implanted layer resistance R/□ thermoelectromotive force, optical transmittance T and open-circuit photovoltage measurements were made on epitaxial n-type 6H-SiC samples and Lely-grown 6H-SiC crystals implanted at 30o and 500 oC with Al ions annealed at 1600 to 2000 oC. The objective was to study processes of defect annealing and activation of implanted aluminum to determine the optimal parameters of the postimplantation annealing mode. It is shown that processes of radiation defect annealing and implanted aluminum activation are characterized by essentially different times that depend on the annealing and implantation conditions. Measurements of the open-circuit photovoltage U enable one to check the aluminum activation process and optimize the annealing conditions. Mon, 01 Jan 2001 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/119335 2001-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/119334 The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating Agueev, O.A.; Svetlichny, A.M. In the work a complex analysis of the influence of size of components and heating temperature upon stresses and defect formation in substrates of the Si-SiO₂ structures is done. It is determined that alteration of shape and size of components can change stresses in the silicon substrate by an order, and the increase in heating temperature from 800 to 1100 °C increases the defect formation criterion by two orders. The optimum size and shape alteration range as well as the heating temperature for defect-free thermal treatment of structures are determined. Mon, 01 Jan 2001 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/119334 2001-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/119333 Experimental investigations and computer modeling of the photochemical processes in Ag-As₂S₃ structures using surface plasmon resonance spectroscopy Chegel’, V.I.; Shirshov, Yu.M.; Kostyukevich, S.O.; Shepeliavy, P.E.; Chegel', Yu.V. Surface plasmon resonance (SPR) was first applied for investigation of the initial stage kinetics of the chemical processes in inorganic resist based on thin-film Ag-As₂S₃ structure. This method enabled to measure optical constants for the super-thin layers (from 0.2 up to 50 nm) and to study the changes in structure and thickness of the films after their exposure with different doses of UV radiation. Computer matching of the experimentally obtained SPR curves enabled to justify the assumption concerning the presence of a thin (close to 0.7-1 nm) intermediate layer with the parameters similar to Ag₂S, which is created during formation of the Ag-As₂S₃ structure, and also estimate its evolution in the course of layers interaction. Mon, 01 Jan 2001 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/119333 2001-01-01T00:00:00Z