http://dspace.nbuv.gov.ua:80/handle/123456789/114607 Mon, 13 Apr 2026 17:50:27 GMT 2026-04-13T17:50:27Z http://dspace.nbuv.gov.ua:80/bitstream/id/341298/ http://dspace.nbuv.gov.ua:80/handle/123456789/114607 http://dspace.nbuv.gov.ua:80/handle/123456789/117975 Study of DNA interaction with carbon nanotubes Dovbeshko, G.I.; Repnytska, O.P.; Obraztsova, E.D.; Shtogun, Ya.V.; Andreev, E.O. Structural characterisation of two different forms of carbon - graphite and single-walled carbon nanotubes (SWCNT) has been done with Raman and FTIR spectroscopy. Interaction of nucleic acids with graphite powder and SWCNT was studied with Surface Enhanced Infrared Absorption (SEIRA) spectroscopy. Analysis of DNA-SWCNT complex vibration modes has shown that the numerous structural changes in DNA have been connected with appearance of new sugar and bases conformations, changes in phosphate vibrations and could be interpreted as A-B conformation transition and stabilisation of structure in some DNA fragments. Only very slight graphite influence on DNA structure have been registered. We have proposed the model of DNA interaction with SWCNT based on wrapping of nucleic acid molecules around carbon nanotubes. The similar situation seems to occur in chromosome during DNA assembling by histones. Wed, 01 Jan 2003 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/117975 2003-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/117974 Charge carrier generation in photosensitive amorphous molecular semiconductors Zabolotny, M.A. Thermalization process in photosensitive amorphous molecular semiconductors are theoretically considered from the standpoint of their parameters, namely: thermalization time, thermalization length. The heat electron formed in consequence of absorption of the light quantum by semiconductor molecules loses his surplus energy in the course of inelastic interaction with neighbouring atoms. The results of theoretical predictions are confirmed by the experimental ones obtained for a number of molecular semiconductors (anthracene, pentacene, PVC, PEPC). Wed, 01 Jan 2003 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/117974 2003-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/117973 About manifestation of the piezojunction effect in diode temperature sensors Borblik, V.L.; Shwarts, Yu.M.; Venger, E.F. An analytical theory of piezojunction effect has developed in application to silicon diode temperature n+-p type sensors, which for the first time takes into account three-subbands structure of the valence band of silicon. The compressive and tensile stresses (along the main crystallographic directions), long- and short-base diodes, longitudinal and transverse effects have been considered. It is shown that the three-subbands model results in even more nonlinear dependence of changes in the sensor readings on stress value (in comparison with the two-subbands model), holds minimality of the longitudinal piezojunction effect under stress orientation along the [100] direction and predicts substantially larger effect value for the strain perpendicular to the current through the diode. Wed, 01 Jan 2003 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/117973 2003-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/117962 Origin of surface layer on common substrates for functional material films probed by ellipsometry Belyaeva, A.I.; Galuza, A.A.; Kudlenko, A.D. A multiple angle ellipsometric method is used to investigate thin film layers on common substrates (gadolinium gallium garnet-GGG, sapphire-Al₂O₃, and glass ceramic sitall) for functional material films. The method evaluates fundamental optical constants and thicknesses of the layers. Dielectric functions for the surface layers on such kind of plates have been determined. Coincidence up to the third decimal point in refractive index value (nf) was shown. Errors for the thickness of surface layer (df) is not more than 3 %. It is shown that the dielectric properties of microscopically rough layers of thickness ~10-45 nm can be accurately modeled in the homogeneous thin layer approximation. The thickness and origin of the surface layer on substrates are found out. Experimental data analysis allows to make some conclusions concerning the origin of this layer. It is a specific amorphous damaged layer that remains after taking out stressed surface layer via chemical polishing. The corrosion processes on glass ceramic seems to be very similar to those occurring on GGG and sapphire single crystals. Wed, 01 Jan 2003 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/117962 2003-01-01T00:00:00Z