http://dspace.nbuv.gov.ua:80/handle/123456789/114537 Sat, 25 Apr 2026 23:07:23 GMT 2026-04-25T23:07:23Z http://dspace.nbuv.gov.ua:80/bitstream/id/341042/ http://dspace.nbuv.gov.ua:80/handle/123456789/114537 http://dspace.nbuv.gov.ua:80/handle/123456789/119247 On the 60-year jubilee of Machulin Volodymyr Fedorovych Academician of NAS of Ukraine 23 April 2010 is the jubilee date in life of Academician of NAS of Ukraine Machulin Volodymyr Fedorovych: he has reached 60-year age. Fri, 01 Jan 2010 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/119247 2010-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/118328 Nanoprobe spectroscopy of capillary forces and its application for a real surface diagnostics Efremov, A.A.; Lytvyn, P.M.; Anishchenko, А.O.; Dyachyns’ka, O.M.; Aleksyeyeva, T.A.; Prokopenko, I.V. The paper presents an overview and analysis of the most reliable and at the same time rather simple theoretical models describing liquid nanomeniscus geometry and forces occurring between atomic force microscope (AFM) probe and a real surface. There are experimental results in capillary bridge force rupture measured in air, and interaction force under water buffer obtained over surfaces of different nature. It is shown that the theoretical models quite adequately describe the processes observed experimentally and, in particular, bridge ruptures dynamics at the vertical probe withdraw for different speeds. Discussed here are some methodological peculiarities and nanocapillary force spectroscopy diagnostic capabilities for surface energy mapping, prospects of using of a liquid nanomeniscus in local nanochemistry, nanolithography and nano-electrochemistry of a surface. Fri, 01 Jan 2010 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/118328 2010-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/118238 Impurity scattering of band carriers Boiko, I.I. Mobility of band carriers scattered on donors, partially ionized, partially neutral, at low temperatures, is considered in general and calculated for AIII-BV group crystals. It is shown that temperature dependence of mobility is determined by relationship between number of ionized and neutral donors and by average energy of electrons. Fri, 01 Jan 2010 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/118238 2010-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/118237 Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry Fodchuk, І.М.; Dovganyuk, V.V.; Litvinchuk, Т.V.; Kladko, V.P.; Slobodian, М.V.; Gudymenko, O.Yo.; Swiatek, Z. Structural changes in silicon single crystals irradiated with high-energy electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve behaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocal space maps (HR-RSMs) were found as a function of the radiation dose. The generalized dynamic theory of X-ray Bragg-diffraction in crystals comprising defects of several types (spherical and disc-shaped clusters as well as dislocation loops) and a damaged nearsurface layer was used for explanation. Fri, 01 Jan 2010 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/118237 2010-01-01T00:00:00Z