http://dspace.nbuv.gov.ua:80/handle/123456789/114535 Mon, 06 Apr 2026 11:57:32 GMT 2026-04-06T11:57:32Z http://dspace.nbuv.gov.ua:80/bitstream/id/341040/ http://dspace.nbuv.gov.ua:80/handle/123456789/114535 http://dspace.nbuv.gov.ua:80/handle/123456789/119248 Author Index 2010 Fri, 01 Jan 2010 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/119248 2010-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/119247 On the 60-year jubilee of Machulin Volodymyr Fedorovych Academician of NAS of Ukraine 23 April 2010 is the jubilee date in life of Academician of NAS of Ukraine Machulin Volodymyr Fedorovych: he has reached 60-year age. Fri, 01 Jan 2010 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/119247 2010-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/118740 Nonlinear stochastic relaxation dynamics in spin-crossover solid-state compounds Gudyma, Iu.V.; Maksymov, A.Iu. A study of dynamic of spin-crossover solid-state compound has been carried out. The investigated macroscopic phenomenological model for molecular spin-crossover complexes with optical control parameter has been extended to the case of noise action. The noise-driven phase transition was observed. Also, ascertained was the role of additive noise as a main factor for suppressing the potential barrier height. Fri, 01 Jan 2010 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/118740 2010-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/118739 Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure Gorley, P.M.; Grushka, Z.M.; Grushka, O.G.; Gorley, P.P.; Zabolotsky, I.I. Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄ heterojunction and investigated temperature evolution of its currentvoltage characteristics under the forward bias U ≤ 3 V. Analyzing temperature dependence of the curves obtained, the main mechanisms of current transport through the semiconductor contact were determined, allowing prediction of successful possible applications of the heterojunction studied under high temperatures and elevated radiation due to the parameters of the base semiconductors and the diode structure itself. Fri, 01 Jan 2010 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/118739 2010-01-01T00:00:00Z