http://dspace.nbuv.gov.ua:80/handle/123456789/114478 Fri, 24 Apr 2026 10:38:06 GMT 2026-04-24T10:38:06Z http://dspace.nbuv.gov.ua:80/bitstream/id/340966/ http://dspace.nbuv.gov.ua:80/handle/123456789/114478 http://dspace.nbuv.gov.ua:80/handle/123456789/118388 IR region challenges: Photon or thermal detectors? Outlook and means Sizov, F. Infrared (IR) detectors play now an increasing role in different areas of human activity (e.g., security and military applications, tracking and targeting, environmental surveillance, fire and harvest control, communications, law enforcement, space surveillance of the Earth, medical diagnostics, etc.). Discussed in the paper are issues associated with the development and exploitation of up to date basic IR radiation detectors and arrays. Recent progress of basic for applications focal plane arrays (FPAs) that has rendered significant influence on infrared imaging is analyzed, and comparison of FPA detector performance characteristics is described with account of operational conditions and performance limits. Sun, 01 Jan 2012 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/118388 2012-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/118327 Photoelectrical properties of nanoporous silicon Luchenko, A.I.; Svezhentsova, K.V.; Melnichenko, M.M. The optimal composition of etchant solution and etching time for chemical treatment to obtain nanoporous Si have been determined. Influence of nanocrystal dimensions on the electrophysical and photoelectrical properties of heterojunctions has been studied. The current-voltage characteristics of nanoporous Si with various nanocrystal dimensions were measured. It was ascertained that lux-ampere characteristics have a linear range and sublinear one, which almost reaches the asymptote at the intensity of light above 10,000 lux. Nanoporous Si on the substrate of Si single-crystal has increased sensitivity to the humidity in comparison with that of metallurgical Si. The obtained results can be applied for development of highly sensitive sensors of humidity Sun, 01 Jan 2012 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/118327 2012-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/118326 Crystallization study of (As₂S₃)₁₀₀-x(SbSI)x amorphous films by the optical method Rubish, V.M.; Kozusenok, O.V.; Shtets, P.P.; Marjan, V.M.; Gera, E.V.; Tarnaj, A.A. The results of isothermal and nonisothermal crystallization investigations of the (As₂S₃)₁₀₀-x(SbSI)x (53≤x≤80) thin films are given. It is shown that the films crystallization is accompanied by a sharp decrease in transmission. The phase structure arising in the matrix of films during crystallization corresponds to the structure of crystalline SbSI. The formation mechanism of nanocrystalline SbSI inclusions in the amorphous matrix is discussed. Sun, 01 Jan 2012 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/118326 2012-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/118325 Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown Aleinikov, A.B.; Berezovets, V.A.; Borblik, V.L.; Shwarts, M.M.; Shwarts, Yu.M. Effect of magnetic field (up to 14 T) on current-voltage characteristics of silicon n⁺ -p diodes which manifests hysteresis loops related with low-temperature impurity breakdown has been studied. With growth of magnetic field, the hysteresis loops are narrowed and decreased in amplitude and then disappear, but the breakdown continues in a soft form. Planar design of the diode has allowed separating the influence of magnetic field on mobility of the carriers executing impact ionization of the impurities and on the ionization energy itself. Theoretical analysis of the experimental data permitted us to determine the dependence of the ionization energy on the magnetic field. As in other investigated semiconductors, our results demonstrate the dependence of B¹/³ type. A model capable to explain qualitatively the mechanism of suppression of the hysteresis loops by magnetic field is proposed as well. Sun, 01 Jan 2012 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/118325 2012-01-01T00:00:00Z