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<title>Semicond. Physics Quantum Electronics &amp; Optoelectronics, 2012, № 1</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/114476</link>
<description/>
<pubDate>Fri, 24 Apr 2026 10:37:15 GMT</pubDate>
<dc:date>2026-04-24T10:37:15Z</dc:date>
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<title>Semicond. Physics Quantum Electronics &amp; Optoelectronics, 2012, № 1</title>
<url>http://dspace.nbuv.gov.ua:80/bitstream/id/340956/</url>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/114476</link>
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<item>
<title>Negative dielectric permittivity of nonmagnetic crystals in the terahertz waveband</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/118282</link>
<description>Negative dielectric permittivity of nonmagnetic crystals in the terahertz waveband
Felinskyi, S.G.; Korotkov, P.A.; Felinskyi, G.S.
Physical conditions for occurrence of the spectral bands with the negative&#13;
dielectric permittivity in nonmagnetic crystalline media in the terahertz waveband have&#13;
been studied in this work. It has been shown that damping the polar vibrations has a&#13;
primary effect on formation of the negative dielectric permittivity in real crystals at&#13;
resonance (terahertz) frequencies, and phonon attenuation imposes significant restrictions&#13;
both on the frequency range and the minimum achievable value for all dielectric tensor&#13;
components. Within frameworks of the single-oscillator model, the authors have&#13;
obtained: i) the criterion for the existence of the negative dielectric permittivity, which is&#13;
based on physical and spectroscopic parameters of the crystal, ii) analytical expressions&#13;
for calculation of the frequency band where the dielectric permittivity takes negative&#13;
values. Frequency regions and the minimum value of negative dielectric permittivity are&#13;
quantitatively defined in the crystal LiTaO₃. It is proved the applicability of the obtained&#13;
relationships in cases of relatively complex phonon vibration spectra.
</description>
<pubDate>Sun, 01 Jan 2012 00:00:00 GMT</pubDate>
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<dc:date>2012-01-01T00:00:00Z</dc:date>
</item>
<item>
<title>Interaction between viral particles and structured metal surface under surface plasmon propagation</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/118281</link>
<description>Interaction between viral particles and structured metal surface under surface plasmon propagation
Lozovski, V.; Lysenko, V.; Spivak, M.; Sterligov, V.
The new method for decontamination of biological liquids (blood or blood&#13;
plasma, for instance) from viruses is proposed. The method is based on the efficient&#13;
attraction between nanoparticles and nanostructured surface, under which the surface&#13;
plasmon-polaritons propagate.
</description>
<pubDate>Sun, 01 Jan 2012 00:00:00 GMT</pubDate>
<guid isPermaLink="false">http://dspace.nbuv.gov.ua:80/handle/123456789/118281</guid>
<dc:date>2012-01-01T00:00:00Z</dc:date>
</item>
<item>
<title>Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/118279</link>
<description>Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K
Ermakov, V.M.; Kolomoets, V.V.; Panasyuk, L.I.; Nazarchuk, P.F.; Yashchynskiy, L.V.
The change in mobility with increasing the temperature which may be due to&#13;
the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial&#13;
pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions&#13;
are not completely removed from valleys located in the plane (100). In this&#13;
case, there is no change in the slope of the dependence logρ  vs. logT for the&#13;
temperature range 300 to 450 K. So, no contribution of g-transitions to intervalley&#13;
scattering occurs, while the observed is tha decisive role of f–transitions to this&#13;
scattering.
</description>
<pubDate>Sun, 01 Jan 2012 00:00:00 GMT</pubDate>
<guid isPermaLink="false">http://dspace.nbuv.gov.ua:80/handle/123456789/118279</guid>
<dc:date>2012-01-01T00:00:00Z</dc:date>
</item>
<item>
<title>Narrow-gap piezoelectric heterostructure as IR detector</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/118277</link>
<description>Narrow-gap piezoelectric heterostructure as IR detector
Sizov, F.F.; Smirnov, A.B.; Savkina, R.K.; Deriglazov, V.A.; Yakushev, M.V.
Narrow-gap mercury cadmium telluride thin films grown by MBE and LPE&#13;
 methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs, HgCdTe/CdZnTe) were&#13;
 investigated as a piezoelectric heterostructure for IR detection. The photoresponse,&#13;
 infrared transmittance spectra, parameters of the charge carrier transport, and mechanical&#13;
 properties were studied. Mechanical stresses at the layer-substrate interface were&#13;
 analyzed. HgCdTe-based infrared device is considered, operating in the middle (3–5 μm)&#13;
 infrared spectral range without cryogenic cooling to achieve performance level D*&#13;
 = 2.6 ⋅ 10⁹ ⋅ W⁻¹ cm ⋅Hz¹/²  The possibility to detect infrared radiation is thought to be&#13;
based on the possibility of the spatial separation of the non-equilibrium carriers in the&#13;
strained semiconductor heterostructure with piezoelectric properties.
</description>
<pubDate>Sun, 01 Jan 2012 00:00:00 GMT</pubDate>
<guid isPermaLink="false">http://dspace.nbuv.gov.ua:80/handle/123456789/118277</guid>
<dc:date>2012-01-01T00:00:00Z</dc:date>
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