http://dspace.nbuv.gov.ua:80/handle/123456789/114451 Mon, 06 Apr 2026 18:51:29 GMT 2026-04-06T18:51:29Z http://dspace.nbuv.gov.ua:80/bitstream/id/340889/ http://dspace.nbuv.gov.ua:80/handle/123456789/114451 http://dspace.nbuv.gov.ua:80/handle/123456789/117697 Structure effect and orientation distribution of azo dyes on optical anisotropy of dyed PVA-films Filippovich, L.N.; Ariko, N.G.; Almodarresiyeh, H.A.; Shahab, S.N.; Malashko, P.M.; Agabekov, V.E. The derivatives of phenylazobenzoic, phenylazosalicylic acids and azobenzeneazonaphthalene were synthesized and employed to prepare polarizing films based on polyvinyl alcohol (PVA). The single-piece transmittance (T0), polarizing efficiency (PE), dichroic ratio (Rd) of films and order parameter of dyes (Sdye) were calculated. It was found that parameters Rd and Sdye increased as electron-donating of substituents in molecules of phenylazobenzoic and phenylazosalicylic acids derivatives was grown, and the polarizing efficiency of film increased with increasing the order parameter of dye. Development of PVA films dyed with the derivatives of phenylazosalicylic acid and azobenzeneazonaphthalene allowed to obtain polarizers for near UV and visible range of spectrum, respectively. It was also developed a broadband polarizer for 300-610 nm. Tue, 01 Jan 2013 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/117697 2013-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/117696 Low-temperature deposition of silicon dioxide films in high-density plasma Yasunas, A.; Kotov, D.; Shiripov, V.; Radzionay, U. One of the basic operations in the LED (light-emitting diode) chip fabrication technique is formation of dielectric coatings for the purpose of insulation and surface passivation of the LED structure. Oxides and nitrides of silicon obtained by physical or chemical vapor deposition techniques can act as such a coating. Low conformity of physical vapor deposition techniques limits the possibility of their application in a number of cases at LED mesostructures passivation. This work represents the results of experiments on silicon dioxide dielectric films deposition in the inductive coupled plasma under different operation conditions. The findings prove the possibility of lowtemperature deposition of thick silicon dioxide films with high conformality by the HDPCVD (high-density plasma chemical vapor deposition) technique. Tue, 01 Jan 2013 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/117696 2013-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/117695 Europium coordination compounds based on carbacylamidophosphate ligands for metal-organic light-emitting diodes (MOLEDs) Litsis, O.O.; Ovchynnikov, V.A.; Sliva, T.Yu.; Amirkhanov, V.M.; Sorokin, V.M.; Minyailo, M.A.; Kolomzarov, Yu.V.; Tytarenko, P.A.; Minakova, I.E. In this work, the photo- and electroluminescence properties of new red phosphores based on europium complexes with carbacylamidophosphate (CAPh) ligands and additional aromatic ligands 1,10-phenantroline and 4,4'-bipyridine have been studied. Compounds Eu(L¹)₃(phen) (1), Eu(L²)₃(phen) (2), Eu2(L¹)₆(i-prOH)²(4,4'-bipy) (3) and Eu²(L²)₆(H2O)²(4,4'-bipy) (4), where HL – 2,2,2-trichloro-N-(dipiperidin-1-ylphosphoryl) acetamide, HL² – 2,2,2-trichloro-N-(dimorpholin-1-ylphosphoryl)acetamide, were synthesized. Technology of europium complexes coating from solutions with different concentrations in different solvents has been developed. Experimental samples of light-emitting planar heterostructures were fabricated using the device architecture comprising an anode (ITO), a hole transport layer of 1,4- Bis(diphenylamino)benzene (BDB), a layer of complex and a cathode (Al or Mg). Another heterostructure configuration with a hole-transport layer of poly(3,4- ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) has also been investigated. The different types of planar heterostructures were prepared, and their current-voltage characteristics have been discussed. Tue, 01 Jan 2013 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/117695 2013-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/117694 Features of the development of LED spotlight for local illumination of extended objects Kudrautsau, K.A.; Kernazhytski, Y.V.; Tsvirka, V.I.; Trofimov, Yu.V.; Posedko, V.S.; Posedko, A.S. The peculiarities of extra narrow-angle LED spotlight development for accent lighting have been described. The optical layout of lighting fixture was developed. The mathematical model that can be used to calculate the optical and geometrical parameters of extra narrow-angle spotlight have been developed. The two actual samples with output lens with the diameters 50 and 100 mm were developed and tested. The results of computer simulation and actual testing the spotlight samples were compared. Tue, 01 Jan 2013 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/117694 2013-01-01T00:00:00Z