http://dspace.nbuv.gov.ua:80/handle/123456789/114449 Mon, 06 Apr 2026 23:32:57 GMT 2026-04-06T23:32:57Z http://dspace.nbuv.gov.ua:80/bitstream/id/340887/ http://dspace.nbuv.gov.ua:80/handle/123456789/114449 http://dspace.nbuv.gov.ua:80/handle/123456789/117821 Studying anisotropic properties of longitudinal inhomogeneous nondepolarizing media with elliptical phase anisotropy Kolomiets, I.S.; Savenkov, S.N.; Oberemok, Ye.A.; Klimov, A.S. In this paper, basing on the anisotropic properties of longitudinal inhomogeneous nondepolarizing media with linear phase anisotropy, more general type of media with elliptical phase anisotropy was studied. The features of propagation of light with privileged states of polarization were observed. Transformation of polarization states of eigenwaves along z axes of light propagation was studied. The orthogonalization properties inherent to this type of medium were obtained. Evolution of linear polarized light in this media was presented and discussed. Tue, 01 Jan 2013 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/117821 2013-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/117820 Is there any future of optical discs? Kryuchyn, A.A.; Petrov, V.V.; Kostyukevych, S.O.; Kostyukevych, K.V.; Kudryavtsev, A.A.; Moskalenko, N.L. Considered in this paper are causes for cutting compact discs out of information technology market. It has been shown a search of new technological solutions for efficient use of CDs in archive data storage. Tue, 01 Jan 2013 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/117820 2013-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/117819 Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum Neimash, V.B.; Poroshin, V.M.; Shepeliavyi, P.Ye.; Yukhymchuk, V.O.; Melnyk, V.V.; Makara, M.A.; Kuzmich, A.G. The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis in thin films of Si:Sn alloy manufactured by thermal evaporation. Formation of Si crystals of the 2 to 4- nm size has been found in the amorphous matrix alloy formed at the temperature 300 C. Total volume of nanocrystals correlates with the content of tin and can comprise as much as 80% of the film. The effect of tin-induced crystallization of amorphous silicon occurred only if there are clusters of metallic tin in the amorphous matrix. The mechanism of tin-induced crystallization of silicon that has been proposed takes into account the processes in eutectic layer at the interface metal tin – amorphous silicon. Tue, 01 Jan 2013 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/117819 2013-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/117818 Graphene layers fabricated from the Ni/a-SiC bilayer precursor Nazarov, A.N.; Vasin, A.V.; Gordienko, S.O.; Lytvyn, P.M.; Strelchuk, V.V.; Nikolenko, A.S.; Stubrov, Yu.Yu.; Hirov, A.S.; Rusavsky, A.V.; Popov, V.P.; Lysenko, V.S. This paper considers a synthesis of graphene flakes on the Ni surface by vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a) SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering technique. The lateral size of graphene flakes was estimated to be about hundreds of micrometers while the thickness estimated using Raman scattering varied from one to few layers in case of vacuum annealing. Rapid thermal annealing (RTA) in nitrogen ambient results in formation of multilayer graphene with surface covering up to 80%. The graphene layers synthesized on Ni during CVD process was used as reference samples. Atomic force microscopy (AFM) is not able to detect graphene flakes in regime of surface topology examination because of large roughness of Ni surface. Employment of scanning Kelvin probe force microscopy (SKPFM) demonstrates correlation of the surface potential and graphene flakes visible in optical microscopy. Using the KPFM method, potential differences between Ni and graphene were determined. Tue, 01 Jan 2013 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/117818 2013-01-01T00:00:00Z