http://dspace.nbuv.gov.ua:80/handle/123456789/114441 Mon, 13 Apr 2026 17:19:12 GMT 2026-04-13T17:19:12Z http://dspace.nbuv.gov.ua:80/bitstream/id/340879/ http://dspace.nbuv.gov.ua:80/handle/123456789/114441 http://dspace.nbuv.gov.ua:80/handle/123456789/121577 Possible mechanism of inhibition of virus infectivity with nanoparticles Khylko, O.L.; Rusinchuk, N.M. The possible mechanism of inhibition of virus infectivity with nanoparticles has been considered both theoretically and experimentally. It has been supposed that inhibition is caused by action of the nanoparticles on specific molecules at the virus surface. A nanoparticle located close to the virus leads to the drastic increase in the local field intensity at this surface. It, in turn, leads to deformation (or destruction) of molecules that are responsible for virus absorption into the cell. When majority of these molecules are deformed, the virus loses its ability to penetrate into the cell and to cause a decease. This mechanism has been studied theoretically by applying the methods of nanophysics and experimental studying the absorption spectra of biological samples. Fri, 01 Jan 2016 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/121577 2016-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/121576 Integration of LED/SC chips (matrix) in reverse mode with solar energy storage Osinsky, V.I.; Masol, I.V.; Feldman, I.Kh.; Diagilev, A.V.; Sukhovii, N.O. In this work, for the first time we investigated controlling the quantum efficiencies of III-nitride LED/SC (solar cells) new energy accumulating elements and supercapacitors as energy storage devices (Enestors). It has been shown that the atomic content in these microenergetic devices gives large possibilities for energy storage from solar light. The developed technique is promising to make ideal new functional LED, LD and SC with a high quantum efficiency and small leakage. This technology can be realized using Si/A³B⁵ integrated processor technology epitaxy with computer driving. Fri, 01 Jan 2016 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/121576 2016-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/121568 Dielectric spectroscopy of CuInSe₂ single crystals Mustafaeva, S.N.; Asadov, S.M.; Guseinov, D.T.; Kasimoglu, I. The results of high-frequency dielectric measurements with obtained α-CuInSe₂ single crystals provided an opportunity to determine the mechanisms of dielectric losses and charge transport, and also to evaluate the density of states at the Fermi level; the average time of charge carrier hopping between localized states, average hopping distance, scattering of trap states near the Fermi level; concentration of deep traps responsible for hopping conductivity in alternate electric fields. Fri, 01 Jan 2016 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/121568 2016-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/121566 Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells Vertsimakha, G.V. The possibility to change the spatial character of the Wannier exciton ground state in a wide single type-II semiconductor quantum well has been studied variationally. A heterostructure with the central layer forming a potential well for holes and a barrier for electrons has been considered. A trial function taking into account the possibility to shift the most probable position of hole from the center of the structure towards interfaces for reducing the distance to electron has been proposed. The exciton transition energy and binding energy were calculated for the structure based on the ZnO one. It has been shown that the proposed trial functions can be used for wide quantum wells for which it describes an exciton state with the carriers localized near the interfaces at a distance of the order of the Bohr radius for bulk exciton. Fri, 01 Jan 2016 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/121566 2016-01-01T00:00:00Z