http://dspace.nbuv.gov.ua:80/handle/123456789/114440 Mon, 13 Apr 2026 17:32:44 GMT 2026-04-13T17:32:44Z http://dspace.nbuv.gov.ua:80/bitstream/id/340878/ http://dspace.nbuv.gov.ua:80/handle/123456789/114440 http://dspace.nbuv.gov.ua:80/handle/123456789/121861 Publication Ethics and Publication Malpractice Statement Fri, 01 Jan 2016 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/121861 2016-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/121535 The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures Ievtukh, V.A.; Ulyanov, V.V.; Nazarov, A.N. In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide have been studied using the modular data acquisition setup for capacitance-voltage measurements. The memory window formation and memory window retention experimental methods were used with the aim to study the trapping/emission processes inside the dielectric layer of MOS capacitor memory within the defined range of elevated temperatures. The trap activation energy and charge localization were determined from measured temperature dependences of charge retention. The electric field dependence of the activation energy with subsequent charge emission law have been determined. Fri, 01 Jan 2016 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/121535 2016-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/121534 Carbon ceramics from plants: Graphitization of biomorphic matrixes Iarmolenko, D.A.; Belyaev, A.E.; Kiselov, V.S. Properties of matrixes obtained from plants at various pyrolysis temperatures have been discussed. The article is devoted to graphitization of carbon matrixes obtained from plants. All stages of production, starting from preparation of the precursors up to high-temperature pyrolysis, have been considered together with some specific properties of matrixes at each stage. Previously unexplored new structural surface changes have been found. The use of potassium-doped wooden precursors showed the graphitization property of the matrix surfaces and allowed to form the matrix capillary wall coating with layers of crystalline graphite as well as graphene flakes and films with a low number of defects. New possibilities to apply these matrixes as examples of ultracapacitor, power unit filter electromagnetic interference and audio power amplifier antiresonance element have been discussed as well. Fri, 01 Jan 2016 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/121534 2016-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/121533 Electronic structure of 2H-SnSe₂: ab initio modeling and comparison with experiment Bletskan, D.I.; Glukhov, K.E.; Frolova, V.V. Energy band structure, total and local partial densities of states, spatial distribution of electronic density of 2H-SnSe₂ have been calculated using the densitym functional theory method in LDA and LDA+U approximations both with and without consideration of spin-orbit interaction. From the band structure calculation results, it follows that 2H-SnSe₂ is an indirect-gap semiconductor. The calculated band structure is compared with the dispersion curves E(k) plotted using the known measurement results of angular dependent photoemission spectra. It has been observed the good agreement between theoretical and experimental dispersion curves. The calculated total and local partial densities of states have been compared with the known experimental data obtained using XPS, UPS, ARXPS, BIS methods. Fri, 01 Jan 2016 00:00:00 GMT http://dspace.nbuv.gov.ua:80/handle/123456789/121533 2016-01-01T00:00:00Z