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<title>Физика низких температур, 2008, № 04-05</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/116161</link>
<description/>
<items>
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<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/116928"/>
<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/116927"/>
<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/116926"/>
<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/116925"/>
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<dc:date>2026-04-11T11:27:15Z</dc:date>
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<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/116928">
<title>A completely self-contained cryogen-free dilution refrigerator, the TritonDR™</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/116928</link>
<description>A completely self-contained cryogen-free dilution refrigerator, the TritonDR™
Mikheev, V.A.; Noonan, P.G.; Adams, A.J.; Bateman, R.W.; Foster, T.J.
Oxford Instruments have developed a new dilution refrigerator for ultralow temperatures down to below&#13;
35 mK. The TritonDRTM system is a continuous cryogenic cycle dilution refrigerator. The refrigerator is&#13;
driven by a closed cycle cryocooler and hence requires no liquid cryogens. The system has a dedicated electronic&#13;
control unit and software that provides full control of operation.
</description>
<dc:date>2008-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/116927">
<title>Electron attachment to atomic hydrogen on the surface of liquid ⁴He</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/116927</link>
<description>Electron attachment to atomic hydrogen on the surface of liquid ⁴He
Arai, T.; Yayama, H.; Kono, K.
We demonstrate a possibility that helium surface electrons at cryogenic temperatures can be used as a&#13;
 new source of very low energy electrons. Since both electrons (e¯) and hydrogen atoms (H) are bound on liquid&#13;
 helium surface, two-dimensional mixture gas of these two species is available on the surface. We found&#13;
 that low energy collision of e¯ and H drives electron attachment to form a negative hydrogen ion (H¯) in the&#13;
 mixture. From our temperature dependence measurement of the reaction rate, it was found that another H&#13;
 atom participate in the reaction. Namely, the reaction is expressed as H + H + e¯ → H¯ + H. Possible reaction&#13;
 mechanisms are discussed in terms of direct three-body process and dissociative attachment process. Measurements&#13;
 in applied magnetic field (B) show that the reaction rate coefficient is suppressed as ~ B⁻². This&#13;
 implies that electron spin singlet collision is relevant for electron attachment.
</description>
<dc:date>2008-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/116926">
<title>Dip-эффект в проводимости 2D-электронов на пленке гелия с шероховатой подложкой</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/116926</link>
<description>Dip-эффект в проводимости 2D-электронов на пленке гелия с шероховатой подложкой
Лейдерер, П.; Назин, С.; Шикин, В.
Обсуждается явление под общим названием dip-эффект в проводимости 2D-электронов на пленке&#13;
гелия с шероховатой подложкой. Рассмотрен частный случай возникновения такого эффекта при движении&#13;
2D-электронов вдоль пленки гелия на периодически гофрированной подложке. Приведены аргументы&#13;
за и против при использовании данного сценария для 2D-электронов на произвольной шероховатой&#13;
подложке.; Обговорюється явище під загальною назвою dip-ефект у провідності 2D-електронів на плівці&#13;
гелію із шорсткою підкладкою. Розглянуто окремий випадок виникнення такого ефекту при русі&#13;
2D-електронів уздовж плівки гелію на періодично гофрованій підкладці. Приведено аргументи за й&#13;
проти при використанні даного сценарію для 2D-електронів на довільній шорсткій підкладці.; The phenomenon generally called the «dip-effect&#13;
» in conduction of 2D electrons at a helium film&#13;
on a rough substrate is discussed. A special case of&#13;
the dip-effect appearing in moving 2D electrons&#13;
along the helium film covering a periodically corrugated&#13;
substrate is considered. Arguments for extending&#13;
the outlined scenario to 2D electrons above the&#13;
substrates with arbitrary corrugation on difficulties of&#13;
this approach are presented.
</description>
<dc:date>2008-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/116925">
<title>Dynamical structure factor of two-dimensional electrons over a helium film</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/116925</link>
<description>Dynamical structure factor of two-dimensional electrons over a helium film
Patricia Cristina Venturini; Nelson Studart; Jose Pedro Rino
The dynamical structure factor of a two-dimensional electrons trapped to a helium film deposited on a&#13;
solid substrate is determined through molecular dynamics simulations for different film thicknesses and two&#13;
substrates. The phases of the system varying from the classical Wigner crystal to strong and intermediate-&#13;
correlated electron liquid as well the influence of the film thickness and substrate are analyzed in the numerical&#13;
experiments.
</description>
<dc:date>2008-01-01T00:00:00Z</dc:date>
</item>
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