http://dspace.nbuv.gov.ua:80/handle/123456789/114610 2026-04-08T04:14:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/118103 Dual model describing effects of evaporated metal gate on low-k dielectric methylsilsesquioxane in metal oxide semiconductor capacitor structure Aw, K.C.; Ibrahim, K. Spin-on Methylsilsesquioxane (MSQ) exhibits low dielectric constant and is an important and promising material to reduce parasitic capacitive coupling between metal layers in semiconductor integrated circuits. However, MSQ has lower film density and therefore more porous than the traditional silicon dioxide (SiO₂) film and could pose reliability issues. This paper is an extension to previous paper [1], which reported that evaporated copper (Cu) onto spin-on MSQ has high leakage current and provides two alternative models with the aid of energy band diagrams to describe the effect of evaporated Cu onto spin-on MSQ using Metal Oxide Semiconductor capacitor (MOSC) structure. 2003-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/118102 Vacuum method for creation of liquid crystal orienting microrelief Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. A mechanism for creation of microrelief surface anisotropy of amorphous films oxides materials which are obtained by oblique reactive cathode sputtering method is described. The influence of technological parameters of sputtering on the LC orienting parameters is investigated. The dependencies of the target material, angle of material emission and reemission processes under the substrate negative ion treatment is shown. The application of oblique reactive cathode sputtering method for creation of LCD with differ-ent size is demonstrated. 2003-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/118093 The study of the lifetime of ZnS-based luminescent films by using the devices of LMS series Popovych, K.; Nakonechny, Yu.; Rubish, I.; Gerasimov, V.; Leising, G. The development of the device to measure the lifetime of ZnS luminescent films with different dopants has been presented. The devices have been designed to operate under semiautomatic ( LMS 01) and program mode (LMS 02) of measuring the parameters of films with setting the input ones. The data are transmitted to a computer and processed by a specialized program that, in its turn, controls the operation of the device, on the whole. 2003-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/118092 Thermally stimulated luminescence studies of undoped and doped CaB₄O₇ compounds Manam, J.; Sharma, S.K. Thermoluminescence of undoped and doped CaB₄O₇ with activators such as Cu and Mn has been investigated. The polycrystalline samples of undoped and doped CaB₄O₇ are prepared by melting method. The formation of CaB₄O₇ compound is checked by X-ray diffraction study and the compound is found to have orthorhombic structure at room temperature. The TSL studies of undoped CaB₄O₇ sample shows two glow peaks at 150°C and 265°C and one shoulder at around 190°C. The TSL studies of Cu doped CaB₄O₇ sample also shows two glow peaks at 160°C and 270°C and a shoulder at around 230°C whereas the TSL glow curves of Mn doped CaB₄O₇ has only one single strong glow peak at 135°C. A comparative TSL studies of these compounds shows that CaB₄O₇ compound doped with Mn is the most sensitive and the TSL intensity is enhanced by about 40 times when compared with the TSL intensity of undoped CaB₄O₇ compound. The trap parameters namely order of kinetics (b), activation energy (E) and frequency factor (s) associated with the 135°C glow peak of CaB₄O₇: Mn phosphor are determined using isothermal decay and glow curve shape (Chen's) methods. 2003-01-01T00:00:00Z