Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 1

Review of monograph

2005-01-01T00:00:00Z

Review of monograph Svechnikov, S.V. Review of monograph: A.A. Akopyan, O. Yu. Borkovskaya, N.L. Dmitruk, A.V. Karimov, R.V. Konakova, V.V. Melenin, A.V. Sachenko, M.N. Tursunov, D.M. Yodgorova. "Photoconverters with AlGaAs/GaAs Heterojunction on Textured GaAs Substrates (Physico-Technological aspects) -Fan Publishers, Tashkent, 2004

Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase

2005-01-01T00:00:00Z

Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase Feychuk, P.; Kopyl, O.; Pavlovich, I.; Shcherbak, L. A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size) with natural faceting were grown by vapor transport in silica ampoules with a special shape using a polycrystalline ingot as initial source material. It is shown that minimization of plastic deformation effect in preparation of the most structurally perfect crystals is possible by a way of heat removal from the crystallization front by radiation. The growth of high-resistive material required careful preparation of the initial charge with close to stoichiometric composition. The obtained crystals were successfully tested for creating the room temperature X-ray and gamma-ray detectors.

Quadric hologram-based self-conjugation of vortex beams

2005-01-01T00:00:00Z

Quadric hologram-based self-conjugation of vortex beams Polyanskii, P.V.; Felde, Ch.V. Self-conjugation of singular (vortex) beams by a static nonlinearly recorded hologram is reported. Diagnostics of phase-conjugated vortices is implemented using an original technique based on Young’s model of diffraction phenomena. It has been shown that the phase-conjugated vortex is characterized by the same topological charge as the vortex reversed through four-wave degenerate mixing being different in sign from the vortex reflected by a common mirror.

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment

2005-01-01T00:00:00Z

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment Nazarov, A.N.; Skorupa, W.; Vovk, Ja.N.; Osiyuk, I.N.; Tkachenko, A.S.; Tyagulskii, I.P.; Lysenko, V.S.; Gebel, T.; Rebohle, L.; Yankov, R.A.; Nazarova, T.M. We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under optimum conditions of plasma treatment, an appreciable increase in the device lifetime has been observed while maintaining the intensity of the light emission unchanged in the violet range of the spectrum. These phenomena are believed to be associated with recovery of the oxide network resulting from a relief of internal mechanical stresses and bond rearrangement that leads to a decrease in the generation efficiency of electron traps which are responsible for the device degradation.