<?xml version="1.0" encoding="UTF-8"?>
<rdf:RDF xmlns="http://purl.org/rss/1.0/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:dc="http://purl.org/dc/elements/1.1/">
<channel rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/114593">
<title>Semicond. Physics Quantum Electronics &amp; Optoelectronics, 2006, № 2</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/114593</link>
<description/>
<items>
<rdf:Seq>
<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/121442"/>
<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/121441"/>
<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/121440"/>
<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/121439"/>
</rdf:Seq>
</items>
<dc:date>2026-04-21T13:44:08Z</dc:date>
</channel>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/121442">
<title>Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/121442</link>
<description>Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta
Madatov, R.S.; Tagiyev, B.G.; Najafov, A.I.; Tagiyev, T.B.; Gabulov, I.A.; Shakili, Sh.P.
The influence of γ-quanta irradiation on photoelectrical and optical properties of lamellar GaS single crystals at different temperatures has been investigated. It is determined that the irradiation of pure crystals at the radiation dose equal to 30 krad results in the creation of shallow compensative acceptors, which are photoactive recombination centers (r-centers), and as a result of this both the photosensitivity and a luminescence connected with r-centers are increased. Irradiation with a radiation dose more than 100 krad results in the quenching of both photosensitivity and recombination luminescence due to formation of complexes [VGa VS]. It is proposed that radiative recombination centers arising in the course of irradiation is conditioned by sulfur hole and interstitial gallium atoms.
</description>
<dc:date>2006-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/121441">
<title>Mass-spectrometric investigations of gas evolution</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/121441</link>
<description>Mass-spectrometric investigations of gas evolution
Asnis, Yu.A.; Baranskii, P.I.; Babich, V.M.; Zabolotin, S.P.; Ptushinskii, Yu.G.; Sukretnyi, V.G.
Method of mass-spectrometry with time-of-flight recording of the desorbed products was used to study the gas evolution of impurities from the subsurface layer of Si crystals molten by the electron beam (of ~2 mm² area) in the vacuum of 10⁻⁵ – 10⁻⁷ Pa. It is shown that irrespective of vacuum level, oxygen (m = 32) and hydrogen (m = 2) in the molecular state as well as Si atoms (m = 28) are registered as the main components of gas evolution in the mass-spectrum in melting. With longer time of the subsurface layer exposure in the molten state, an indication of CO evolution (fragment peak m = 12) appears in the mass-spectrum. There is, however, a ground to believe that this is the consequence of gas evolution from the fixtures, and not from the Si sample. Features of gas evolution were revealed at the initial stage of heating and melting of Si sample, depending on the previous heat-treatment of the sample. If melting the subsurface zone proceeds after contact with the atmosphere, initial peaks of evolution of oxygen and hydrogen molecules and Si atoms are observed. These are partially weakened with further keeping the sample in the molten state. In our opinion, such a peak is due to contamination of the surface at such a contact. A long-term exposure in vacuum of a sample cooled after melting does not lead to appearance of the above peak at subsequent melting.
</description>
<dc:date>2006-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/121440">
<title>Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/121440</link>
<description>Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals
Makara, V.A.; Steblenko, L.P.; Kolchenko, Yu.L.; Naumenko, S.M.; Lisovsky, I.P.; Mazunov, D.O.; Mokliak, Yu.Yu.
IR spectroscopy study is indicative of the change in the relative concentration of interstitial oxygen in silicon monocrystals after their treatment by using the magnetic field. This is an evidence of a considerable effect of magnetic field on the defect structure of the investigated crystals.
</description>
<dc:date>2006-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/121439">
<title>Discrimination of the saturated vapours of alcohols by the responses of assembly of piezoquartz sensors covered with metal stearates and their complexes with octadecylamine</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/121439</link>
<description>Discrimination of the saturated vapours of alcohols by the responses of assembly of piezoquartz sensors covered with metal stearates and their complexes with octadecylamine
Filippov, A.P.; Strizhak, P.E.; Denisyuk, D.I.; Serebry, T.G.; Ivaschenko, T.S.
The sensitivity of sensor assembly based on piezoquartz resonators (PQR) with the chemical coatings of the specified type relatively to the saturated vapours of several lowest alcohols is investigated. As the chemical coatings, some complex compounds of d-transition metals with stearate anion (St⁻) and octadecylamine (ODA) of the general formula M(ODA)NSt₂ were used, where M²⁺ are ions of d-transition metals Cu(II), Co(II), Ni(II), and N was equal 0, 2, 4, and 6. The sensor images for each of all alcohols investigated by us has the unique character that can be used for discrimination between individual alcohols by using the set of coatings of PQR sensors applied in this work.
</description>
<dc:date>2006-01-01T00:00:00Z</dc:date>
</item>
</rdf:RDF>
