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<title>Semicond. Physics Quantum Electronics &amp; Optoelectronics, 2007, № 2</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/114588</link>
<description/>
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<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/117920"/>
<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/117919"/>
<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/117918"/>
<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/117917"/>
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<dc:date>2026-04-18T23:56:12Z</dc:date>
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<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/117920">
<title>Organic iso-type pentacene – lead phthalocyanine heterostructures</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/117920</link>
<description>Organic iso-type pentacene – lead phthalocyanine heterostructures
Vertsimakha, Ya.I.; Lutsyk, P.M.
The photovoltaic properties of organic iso-type heterostructures based on&#13;
pentacene (Pn) and lead phthalocyanine (PbPc) prepared by thermal deposition at&#13;
different substrate temperatures (Ts) are investigated. It is shown that, at modulated&#13;
illumination for Pn/PbPc heterostructures prepared at Тs = 300 K, the reversal of a sign is&#13;
observed in photovoltage spectra. The properties of the structures are well described by&#13;
the Van Opdorp model that indicates the presence of the high surface recombination rate&#13;
of charge carriers at the interface of heterostructure components. At this, the contribution&#13;
of heterostructure components to the photovoltage formation can be changed with&#13;
unmodulated monochromatic additional illumination. In Pn/PbPc heterostructures&#13;
prepared at Ts = 370 K, there is no reversal of the photovoltage sign, and the photovoltage&#13;
is significantly (up to twice) higher in comparison with both heterostructures&#13;
obtained at Ts = 300 K and separate layers of components (Pn and PbPc). This is the&#13;
evidence for the low recombination rate of charge carriers at the interface of Pn/PbPc&#13;
heterostructures prepared at Ts = 370 K
</description>
<dc:date>2007-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/117919">
<title>Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/117919</link>
<description>Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate
Lysiuk, V.O.; Staschuk, V.S.; Kluy, M.I.; Vakulenko, O.V.; Poperenko, L.V.
The systems “thin Ni film – lithium niobate” and “thin Pd film – lithium&#13;
tantalate” are implanted by Ar⁺ ions with an energy of 100 keV and a dose of 10¹⁶ cm⁻².&#13;
Analyses of the systems by AFM and SEM have shown that the ion implantation&#13;
essentially modifies the near-surface structure resulting in a change of its optical,&#13;
electrical, and mechanical properties. Strong difference in the near-surface structures&#13;
between implanted systems with Ni or Pd thin films is observed. Such a difference is&#13;
explained by the heterogeneity of an ion beam and different properties of the materials.&#13;
The application to the development of high-sensitive pyroelectric detectors with high&#13;
damage threshold is proposed.
</description>
<dc:date>2007-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/117918">
<title>Investigation of light polarization in CdS in the presence of two-photon absorption</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/117918</link>
<description>Investigation of light polarization in CdS in the presence of two-photon absorption
Kulish, M.R.; Lisitsa, M.P.; Malysh, N.I.
It is shown that, under the two-photon absorption in CdS, the increase in the&#13;
azimuth of polarization causes a smooth change of the large semi-axis angle rotation,&#13;
ellipticity, focal parameter, and eccentricity of the polarization ellipse. When the angle of&#13;
phase lag δ = 40⁰, the minimum value of ellipticity and the maximal values of focal&#13;
parameter and eccentricity will be realized.
</description>
<dc:date>2007-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/117917">
<title>Characterization of nanoscaled films on flat and grating substrates as some elements of plasmonics</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/117917</link>
<description>Characterization of nanoscaled films on flat and grating substrates as some elements of plasmonics
Dmitruk, N.L.; Mayeva, O.I.; Korovin, A.V.; Mamykin, S.V.; Sosnova, M.V.; Yastrubchak, O.B.
The optical properties of multilayer structures consisting of dielectric,&#13;
conductivity-oxide and nanoscaled metal layers, deposited on the planar substrates&#13;
(witness samples) and surface relief ones (diffraction gratings) with micro- and nanoscale&#13;
sizes, are investigated by AFM, spectral ellipsometry (SE), and photometric techniques.&#13;
The SE-measured parameters are related to actual characteristics of the layers when&#13;
specified the model of their near-surface regions. Using a parametrization of the layer&#13;
dielectric function versus the wavelength and a fitting procedure, the dielectric&#13;
parameters are determined. It is shown that the optical constants are affected by both the&#13;
substrate morphology and the adjacent medium. Preliminary data about the influence of&#13;
isolated particle plasmon excitations in 2D-substrates with the top nanoscaled Au layer&#13;
on its optical properties are presented.
</description>
<dc:date>2007-01-01T00:00:00Z</dc:date>
</item>
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