http://dspace.nbuv.gov.ua:80/handle/123456789/114585 2026-04-06T22:40:45Z http://dspace.nbuv.gov.ua:80/handle/123456789/119374 Author Index 2008 2008-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/119082 Optical properties of diamond-like carbon films subjected to ultraviolet irradiation Klyui, N.I.; Litovchenko, V.G.; Lukyanov, A.N.; Klyui, A.N. Influence of UV irradiation on optical properties of the nitrogen doped diamond-like carbon (DLC) films was studied. Transparency spectra of the initial, UV irradiated and concentrated UV irradiated films were measured. Dependences of the optical bandgap on the nitrogen content were obtained from these spectra. Raman measurements revealed a decrease in the graphitic cluster size by two times after UV irradiation. It was shown that concentrated UV irradiation leads to smaller changes in comparison with nonconcentrated UV. Physical mechanism of air oxygen embedding into the DLC structure under UV irradiation is proposed to explain the changes in the properties of the films. 2008-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/119081 Ordered Carbon Nanotubes and Globular Opals As a Model of Multiscaling Photonic Crystals Dovbeshko, G.; Fesenko, O.; Moiseyenko, V.; Gorelik, V.; Boyko, V.; Sobolev, V. Experimental data on carbon nanotube carpet and synthetic opals have been compared by visible, infrared spectroscopy, and electron microscopy. Spectral features of the objects under study in infrared region are registered. Three regions of abnormal behavior of reflectance and absorbance for carbon nanotube carpet and two regions for opals in the 7000-2000 cm⁻¹ are observed in comparison with the separated nanotubes or SiO₂ globules in disordered states and/or condensed state. The spectroscopic features of the photonic crystals caused by their different microstructures at different length scales and basis for development of a proper model for light propagation through the photonic crystals in the IR region are presented for discussion. 2008-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/119080 The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers Solntsev, V.S.; Gorbanyuk, T.I.; Litovchenko, V.G.; Evtukh, A.A. The adsorboelectric effect arising in multilayered semiconductor structures based on the porous Si with catalytically active Pd electrodes due to action of low concentrations of hydrogen containing gases (Н₂, H₂S) at the room temperature is studied. The kinetic dependences of the change in output signals of the samples upon action of different concentrations of gas molecules are studied using the capacitancevoltage characteristic method. The isotherms of adsorption are derived. A physical model of the adsorption of hydrogen containing gases in these structures is proposed to explain the observed phenomena. 2008-01-01T00:00:00Z