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<title>Semicond. Physics Quantum Electronics &amp; Optoelectronics, 2008, № 1</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/114582</link>
<description/>
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<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/118677"/>
<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/118675"/>
<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/118674"/>
<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/118673"/>
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<dc:date>2026-04-17T05:01:57Z</dc:date>
</channel>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/118677">
<title>Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/118677</link>
<description>Research of the photo-voltaic effect in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure with various thicknesses of a base
Yodgorova, D.M.; Karimov, A.V.; Giyasova, F.A.; Karimova, D.A.
The results of research of photoelectric phenomena in the two-base Ag-N⁰AlGaAs-n⁺GaAs-n⁰GaInAs-Au structure are presented. The photo-voltaic effect&#13;
observable in a wide range of the spectrum (0.4-2 µm) is explained by different signs of&#13;
the photo EMF created by the separation of photocarriers in the energy barrier and from&#13;
the levels of intrinsic defects as well as deep impurities of oxygen in the quasineutral&#13;
base. A mechanism of photosensitivity of thin base structures with Schottky-Mott’s&#13;
barrier under photovoltaic conditions is offered.
</description>
<dc:date>2008-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/118675">
<title>Combined Fourier hologram as a noise-resist method of synthesis 2D computer-generated hologram with single diffractive order</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/118675</link>
<description>Combined Fourier hologram as a noise-resist method of synthesis 2D computer-generated hologram with single diffractive order
Braginets, E.V.; Girnyk, V.I.; Kostyukevich, S.A.; Kurashov, V.N.; Bushma, A.V.
In this paper, a comparative analysis of two approaches to synthesis 2D&#13;
hologram, which restores optical field without conjugated images, is performed. These&#13;
holograms are used in embossed rainbow protective holograms to improve their forgeryproof&#13;
characteristics. As a basis, one method of kinoform hologram synthesis is used,&#13;
which allows to obtain the restored image of acceptable quality, but phase-matching&#13;
condition is necessary to complete. That limits usage of this method in mass production&#13;
of embossed holograms. The offered method of combined holograms is based on&#13;
addition of optical fields restored by separated Fourier holograms. This method let us to&#13;
avoid hard requirements to technical process on resist – polymer relief translating&#13;
accuracy. Thus, the proposed method can be recommended for application in mass&#13;
production of rainbow protective holograms.
</description>
<dc:date>2008-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/118674">
<title>New features of surface plasmon resonance detected by modulation of electromagnetic radiation polarization</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/118674</link>
<description>New features of surface plasmon resonance detected by modulation of electromagnetic radiation polarization
Berezhinsky, L.J.; Matyash, I.E.; Rudenko, S.P.; Serdega, B.K.
Using a technique based on modulation of electromagnetic radiation&#13;
polarization, we studied the features of surface plasmon resonance in gold nanofilms&#13;
deposited onto the surface of a totally reflecting prism (fused quartz). The angular&#13;
characteristics of the polarization difference of squares of the reflectance coefficient&#13;
modules for s- and p-polarized radiation,&#13;
∆ρ =|Rs|² − |Rp|² , were measured (at a wavelength&#13;
λ = 0.63 µm) for metal films whose thickness varied from 0 up to 120 nm.&#13;
Contrary to the results given by the traditional techniques, the characteristics of ∆ρ peak&#13;
under the resonance condition. As a result, two nonresonance components were found in&#13;
these characteristics. The values and shapes of their angular dependences are determined&#13;
by the coefficients of internal reflection from the metal and insulator that depend on the&#13;
film thickness. Application of a model with exponential dependence of the refraction and&#13;
extinction coefficients on the metal film thickness led to agreement between the results&#13;
of calculation from the Fresnel formulas and those obtained experimentally. It was found&#13;
that characteristic parameter of the exponential corresponds to the metal film thickness&#13;
value of 11±0.5 nm.
</description>
<dc:date>2008-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/118673">
<title>Universal Electro-Optical Hybrid Logic Gates</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/118673</link>
<description>Universal Electro-Optical Hybrid Logic Gates
Ekkurthi Sreenivasa Rao; Satyam, M.; Lal Kishore, K.
An Electro-Optical Hybrid Logic Gate is defined as a circuit which accepts&#13;
either electrical or optical signals and produces both electrical and optical signals. This&#13;
paper explores the feasibility to develop universal hybrid NOR and NAND gates which&#13;
can be used for implementing any basic gate like AND, OR, or any complex logic&#13;
function. These hybrid logic gates are proposed and implemented using phototransistors&#13;
and LEDs. The logic circuits are found to be working satisfactorily for the defined logic&#13;
levels.
</description>
<dc:date>2008-01-01T00:00:00Z</dc:date>
</item>
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