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<title>Semicond. Physics Quantum Electronics &amp; Optoelectronics, 2010, № 4</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/114539</link>
<description/>
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<dc:date>2026-04-06T07:18:56Z</dc:date>
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<title>Author Index 2010</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/119248</link>
<description>Author Index 2010
</description>
<dc:date>2010-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/118740">
<title>Nonlinear stochastic relaxation dynamics in spin-crossover solid-state compounds</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/118740</link>
<description>Nonlinear stochastic relaxation dynamics in spin-crossover solid-state compounds
Gudyma, Iu.V.; Maksymov, A.Iu.
A study of dynamic of spin-crossover solid-state compound has been carried&#13;
out. The investigated macroscopic phenomenological model for molecular spin-crossover&#13;
complexes with optical control parameter has been extended to the case of noise action.&#13;
The noise-driven phase transition was observed. Also, ascertained was the role of&#13;
additive noise as a main factor for suppressing the potential barrier height.
</description>
<dc:date>2010-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/118739">
<title>Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/118739</link>
<description>Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure
Gorley, P.M.; Grushka, Z.M.; Grushka, O.G.; Gorley, P.P.; Zabolotsky, I.I.
Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄&#13;
heterojunction and investigated temperature evolution of its currentvoltage&#13;
characteristics under the forward bias U ≤ 3 V. Analyzing temperature&#13;
dependence of the curves obtained, the main mechanisms of current transport through the&#13;
semiconductor contact were determined, allowing prediction of successful possible&#13;
applications of the heterojunction studied under high temperatures and elevated radiation&#13;
due to the parameters of the base semiconductors and the diode structure itself.
</description>
<dc:date>2010-01-01T00:00:00Z</dc:date>
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<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/118738">
<title>Thermal simulation of heterogeneous structural components in microelectronic devices</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/118738</link>
<description>Thermal simulation of heterogeneous structural components in microelectronic devices
Gavrysh, V.I.; Fedasyuk, D.V.
The steady state nonlinear problem of thermal conduction for isotropic strip&#13;
with foreign rectangular inclusion that heats as an internal thermal source with heat&#13;
dissipation has been considered. The methodology to solve this problem and its&#13;
application for the specific dependence of the thermal-conductivity coefficients on&#13;
temperature has been offered.
</description>
<dc:date>2010-01-01T00:00:00Z</dc:date>
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