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<title>Semicond. Physics Quantum Electronics &amp; Optoelectronics, 2011, № 4</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/114484</link>
<description/>
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<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/117802"/>
<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/117801"/>
<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/117800"/>
<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/117799"/>
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<dc:date>2026-04-04T13:38:42Z</dc:date>
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<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/117802">
<title>Can nanoparticles be useful for antiviral therapy?</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/117802</link>
<description>Can nanoparticles be useful for antiviral therapy?
Lozovski, V.; Lysenko, V.; Pyatnitsia, V.; Spivak, M.
In this paper, optical properties of the system consisting of mesoparticles&#13;
(small dielectric particles) and nanoparticles (quantum dots) of various shapes have been&#13;
considered. This system can be characterized by resonant absorption of electromagnetic&#13;
waves and used for developing the new approach to antiviral therapy.
</description>
<dc:date>2011-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/117801">
<title>Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/117801</link>
<description>Partial dielectric behavior of the Mo electron spectrum as an effect of Van Hove singularities
Ignatyeva, Т.А.
The investigation shows that the specific conductivity of Mo sharply decreases&#13;
 exponentially under the temperature influence within the range from ~20 to ~60 K or&#13;
 under the Re impurity influence in the concentration range up to 3  4 at.% and then&#13;
 transforms into the power dependence. Noted there are two singularities in the Mo&#13;
 specific conductivity, namely, an exponential conductivity change within the small&#13;
 energy range and the presence of a threshold energy value equivalent to ~50 K, which&#13;
 can be related to the mobility edge for localized electron states at the spectrum edge in&#13;
 the vicinity of the critical energy C1 (arising of a small-size electron lens). The identity&#13;
 in the behavior of Mo specific conductivity change, independently on the external&#13;
 parameter influencing on the Fermi level position relatively to the critical points of the&#13;
 electron spectrum, is shown. This fact permits to assume that the singularities under&#13;
 consideration can be related to the partial dielectric behavior of the electron spectrum,&#13;
 depending on the Fermi level position relatively to the critical energies
</description>
<dc:date>2011-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/117800">
<title>Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/117800</link>
<description>Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices
Gavrysh, V.I.
The steady-state linear thermal conductivity problem for an isotropic layer&#13;
with a thin foreign parallelepipedic inclusion that releases heat has been considered with&#13;
account of heat dissipation. The methodology for analytic solution of three-dimensional&#13;
steady-state boundary thermal conductivity problem has been suggested.
</description>
<dc:date>2011-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/117799">
<title>Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/117799</link>
<description>Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field
Vladimirova, T.P.; Kyslovs’kyy, Ye.M.; Molodkin, V.B.; Olikhovskii, S.I.; Koplak, O.V.; Kochelab, E.V.
Quantitative characterization of complex microdefect structures in annealed&#13;
silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a&#13;
weak magnetic field (1 T) has been performed by analyzing the rocking curves, which&#13;
have been measured by a high-resolution double-crystal X-ray diffractometer. Based on&#13;
the characterization results, which have been obtained by using the formulas of the&#13;
dynamical theory of X-ray diffraction by imperfect crystals with randomly distributed&#13;
microdefects of several types, the concentrations and average sizes of oxygen precipitates&#13;
and dislocation loops after imposing the magnetic field and their dependences on time&#13;
after its removing have been determined.
</description>
<dc:date>2011-01-01T00:00:00Z</dc:date>
</item>
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