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<title>Semiconductor Physics Quantum Electronics &amp; Optoelectronics, 2014, том 17</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/114470</link>
<description/>
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<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/119222"/>
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<rdf:li rdf:resource="http://dspace.nbuv.gov.ua:80/handle/123456789/118513"/>
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<dc:date>2026-04-16T19:26:48Z</dc:date>
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<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/119222">
<title>Publication Ethics and Publication Malpractice Statement</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/119222</link>
<description>Publication Ethics and Publication Malpractice Statement
All editors, reviewers and authors, should be familiarized and take into account the Publication Ethics and&#13;
Publication Malpractice Statement of the international journal “Semiconductor Physics, Quantum Electronics and&#13;
Optoelectronics”. This statement is based on the COPE Code of Conduct for Journal Editors.
</description>
<dc:date>2014-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/119221">
<title>Publication Ethics and Publication Malpractice Statement</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/119221</link>
<description>Publication Ethics and Publication Malpractice Statement
All editors, reviewers and authors, should be familiarized and take into account the Publication Ethics and&#13;
Publication Malpractice Statement of the international journal “Semiconductor Physics, Quantum Electronics and&#13;
Optoelectronics”. This statement is based on the COPE Code of Conduct for Journal Editors.
</description>
<dc:date>2014-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/118513">
<title>A model for non-thermal action of microwave radiation on oxide film/semiconductor structures</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/118513</link>
<description>A model for non-thermal action of microwave radiation on oxide film/semiconductor structures
Okhrimenko, O.B.
A model is considered that explains mechanism of non-thermal action of&#13;
microwave radiation on the thin SiO₂ (ТiO₂, Er₂O₃, Gd₂O₃) film/SiC and SiO₂/GaAs&#13;
structures. It assumes that the centers of electron-hole recombination are redistributed&#13;
because of resonance interaction between dislocations of certain length and microwave&#13;
radiation. As a result, additional bands appear in photoluminescence (PL) spectra of the&#13;
oxide film/SiC structures or intensities of some bands are redistributed in the PL spectra of&#13;
the SiO₂/GaAs structure, as well as optical density of the oxide film/SiC structures changes.
</description>
<dc:date>2014-01-01T00:00:00Z</dc:date>
</item>
<item rdf:about="http://dspace.nbuv.gov.ua:80/handle/123456789/118512">
<title>Nucleation and growth kinetics of colloidal nanoparticles CdS:Mn in aqueous solution of polyvinyl alcohol</title>
<link>http://dspace.nbuv.gov.ua:80/handle/123456789/118512</link>
<description>Nucleation and growth kinetics of colloidal nanoparticles CdS:Mn in aqueous solution of polyvinyl alcohol
Rudko, G.Yu.; Fediv, V.I.; Savchuk, A.I.; Gule, E.G.; Vorona, I.P.; Nosenko, V.V.
Colloidal undoped CdS and doped CdS:Mn nanoparticles were synthesized in&#13;
the solution of polyvinyl alcohol polymer, and the process of nanoparticles growth was&#13;
monitored by optical absorption measurements. The inclusion of Mn²⁺ impurity was&#13;
checked by electron paramagnetic resonance measurements. It is shown that the core of&#13;
CdS:Mn nanoparticle is undoped. The results obtained demonstrated that the rate of the&#13;
band gap value decrease during nanoparticles growth is slower for the Mn-doped&#13;
nanoparticles as compared to the undoped ones. This effect was ascribed to the inhibition&#13;
of nanoparticles growth in the solution containing manganese salt. The model of the&#13;
adsorptive doping of CdS NPs with manganese was proposed.
</description>
<dc:date>2014-01-01T00:00:00Z</dc:date>
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