http://dspace.nbuv.gov.ua:80/handle/123456789/114452 2026-04-18T09:27:38Z http://dspace.nbuv.gov.ua:80/handle/123456789/117737 Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs Rudenko, T.; Nazarov, A.; Kilchytska, V.; Flandre, D.; Popov, V.; Ilnitsky, M.; Lysenko, V. The charge coupling between the gate and substrate is a fundamental property of any fully-depleted silicon-on-insulator (SOI) MOS transistor, which manifests itself as a dependence of electrical characteristics at one Si film/dielectric interface on charges at the opposite interface and opposite gate bias. Traditionally, gate-to-substrate coupling in SOI MOS transistors is described by the classical Lim-Fossum model. However, in the case of SOI MOS transistors with ultra-thin silicon bodies, significant deviations from this model are observed. In this paper, the behavior of gate coupling in SOI MOS structures with ultra-thin silicon films and ultra-thin gate dielectrics is studied and analyzed using experimental data and one-dimensional numerical simulations in classical and quantum-mechanical modes. It is shown that in these advanced transistor structures, coupling characteristics (dependences of the front- and back-gate threshold voltages on the opposite gate bias) feature a larger slope and much wider (more than doubled) linear region than that predicted by the Lim-Fossum model. These differences originate from both electrostatic and quantization effects. A simple analytical model taking into account these effects and being in good agreement with numerical simulations and experimental results is proposed. 2013-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/117736 Use of radiation from PC screen for non-destructive controlling the internal strains in transparent parts Maslov, V.P.; Kachur, N.V. It is known that the most widely used method to control internal strains is the optical polarization method. However, the sources of polarized radiation are the most problem issue of this method. There are some difficulties in using this method when testing large-scale optical parts, diameters of which exceed 500 mm. To choose an optical source suitable for solving these tasks, we have analyzed the design of liquidcrystal screens and ascertained the possibility to use their polarized radiation in tests of internal strains in optical parts of large dimensions. Adduced below are the results of investigations of internal strains in parts of sapphire and organic glass. 2013-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/117735 On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ Borovoy, N.; Gololobov, Yu.; Isaienko, G.; Salnik, A. The temperature dependences of the unit cell parameters a(T) and c(T) of Ag₃AsS₃ were measured by the X-ray dilatometry method with high precision within the temperature range 100 to 300 K in the dark mode and under laser irradiation (λ = 532 nm). It was found that the parameter c increases almost linear with decreasing the temperature from 300 down to 100 K for samples in the dark. At the same time, for samples that were exposed during cooling to laser irradiation, the increase of the parameter с by the value ∆c ≈ (0.002…0.003) Å is observed at temperatures Tp = 145…147 K. This leap is typical for systems in which a phase transition of the first order occurs. Furthermore, there were investigated temperature dependences of the integral relative intensity I(T) of main structural maxima of Ag₃AsS₃ both in the dark mode and under laser irradiation. It was established the character of the dependence I(T) for these reflexes was changed significantly by laser irradiation. 2013-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/117734 Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN Belyaev, A.E.; Boltovets, N.S.; Zhilyaev, Yu.V.; Zhigunov, V.S.; Konakova, R.V.; Panteleev, V.N.; Sachenko, A.V.; Sheremet, V.N. We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect of microwave treatment on their electrophysical properties. After microwave treatment for time t up to 1000 s, the contact resistivity dropped by 16% (60%) in the contact to AlN (GaN). This seems to result from increase of the number of structural defects in the semiconductor near-contact region caused by relaxation of intrinsic stresses induced by microwave radiation. 2013-01-01T00:00:00Z