Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 1
http://dspace.nbuv.gov.ua:80/handle/123456789/114450
2026-04-20T19:01:54ZThe influence of temperature on optical properties of merocyanine dye thin films
http://dspace.nbuv.gov.ua:80/handle/123456789/117671
The influence of temperature on optical properties of merocyanine dye thin films
Sieryk, M.M.; Doroshenko, T.P.; Grytsenko, K.P.; Navozenko, O.M.; Tolmachev, O.I.; Slominski, Yu.L.; Schrader, S.
Merocyanine dye thin films have been investigated using optical microscopy
methods. The films were deposited using the method of thermal evaporation. The
influence of substrate type and temperature on optical properties and spatial orientation
of molecules in the above films has been studied. The influence of annealing on
structural reorientation of molecules in thermally deposited dye films has been
determined.
2013-01-01T00:00:00ZLaser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix
http://dspace.nbuv.gov.ua:80/handle/123456789/117670
Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix
Nikolenko, A.S.
Influence of combined size confinement effect and effect of local laser heating
on the first-order Raman spectrum of silicon nanocrystals embedded into SiOx matrix has
been studied. Increase of the local temperature of Si nanocrystals caused by laser
illumination with the power density up to 10 mW/μm² was estimated from the ratio of
the Stokes/anti-Stokes peak intensities. Almost linear dependence of nanocrystals local
temperature on the power density of exciting radiation with a rate of 63.6 Km² /mW has
been found. The phonon line shape at power densities, when no laser heating effect is
registered, was shown to be described well within the correlation length model of phonon
confinement of Si nanocrystals with the size L = 9.2 nm. Observed phonon softening and
broadening with increase of the exciting power density is considered as temperatureinduced vibration anharmonicity with the decay of optical phonons through three and four-phonon processes and corresponding anharmonic constants have been determined.
2013-01-01T00:00:00ZA subharmonic mixer for the 220–325 GHz frequency range
http://dspace.nbuv.gov.ua:80/handle/123456789/117669
A subharmonic mixer for the 220–325 GHz frequency range
Zorenko, A.V.; Kolesnik, N.V.; Kritskaya, T.V.; Kudryk, Ya.Ya.; Marunenko, Yu.V.; Ryzhanovich, L.P.
We have made a subharmonic mixer (SHM) for the 220–325 GHz frequency
range with conversion losses lower than 30 dB at the intermediate frequency 3 GHz. The
subharmonic mixer design was based on a GaAs mixer Schottky barrier diode with beam leads on a quartz 25-μm thick microwave board. The microwave board was placed in a
package with a waveguide channel of local oscillator input (cross-sectional area
1.2×2.4 mm) and waveguide channel of signal input (cross-sectional area 0.4×0.8 mm²
). The IF signal goes out through a subminiature A-connector, wave impedance of which is 50 Ohm.
2013-01-01T00:00:00ZFeatures of piezoresistance in heavily doped n-silicon crystals
http://dspace.nbuv.gov.ua:80/handle/123456789/117668
Features of piezoresistance in heavily doped n-silicon crystals
Gaidar, G.P.
It has been shown that in silicon single crystals heavily doped with arsenic the
presence of the temperature gradient at the interface of the liquid and solid phases in the
process of growing them from a melt does not lead to anisotropy of piezoresistance under the passing current both along the direction of deforming load (J || X || 111) and
perpendicularly to it (J ⊥ X || 111). This is considered as an evidence of the dominant
influence of randomization in spatial distribution of a dopant due to kT (at T = 1685 K)
during the growth of single crystals.
2013-01-01T00:00:00Z