http://dspace.nbuv.gov.ua:80/handle/123456789/114448 2026-04-23T03:23:17Z http://dspace.nbuv.gov.ua:80/handle/123456789/121277 Influence of nanostructured ITO films on surface recombination processes in silicon solar cells Kostylyov, V.P.; Sachenko, A.V.; Serba, O.A.; Slusar, T.V.; Vlasyuk, V.M.; Tytarenko, P.O.; Chernenko, V.V. This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of non-passivated and passivated front illuminated surface. Passivation was performed by silicon dioxide layer or ITO layer. It was found that ITO layer surface passivation with formation of ITO/silicon heterojunction, unlike silicon dioxide layer passivation, leads to a significant reduction of the effective surface recombination velocity. It significantly increases the value of the internal quantum efficiency in the wavelength range from 550 to 1050 nm and, as a result, significantly increases the value of short-circuit current of solar cells. 2015-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/121276 Long-wave light sensitivity of a thin film system based on PbI₂ and Cu Sopinskyy, M.V.; Mynko, V.I.; Olkhovik, G.P. Photostimulated interaction in a sandwich-like thin film system based on PbI₂ and Cu (photodoping effect) makes it possible to use the system as a recording medium. On the other hand, since the layer consisting of copper nanoparticles embedded into the PbI₂ matrix is formed as a result of photodissolution of Cu film, this effect can be considered as an original way to produce nanocomposites. In this work, long-wave sensitivity of the PbI₂–Cu₂O–Cu system has been studied in conjunction with the structure of the PbI₂ film. It has been established that, in the hν < Eg (PbI₂) spectral region the light absorption in PbI₂ film and the metal film photodissolution rate are higher for the less compact (more porous) PbI₂ films. 2015-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/121275 Probabilistic approach to the analysis of regularities in behavior of material parameters of electronic equipment under action of external fields Milenin, G.V. It has been shown that the dependence between the parameters of materials of electronic equipment and external fields is determined by the distribution function of the corresponding random variable. The obtained results have been applied to the analysis of a number of physical phenomena. 2015-01-01T00:00:00Z http://dspace.nbuv.gov.ua:80/handle/123456789/121274 Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film Okhrimenko, O.B We propose a phenomenological model that explains the changes in the optical spectra of the structures wide gap semiconductor – oxide film, which takes place as a result of short-term microwave treatment. To explain the specific athermal microwave exposure, proposed was an integrated approach that is a combination of several processes that are described by various models. Interaction of processes caused by the resonant interaction of microwave radiation with the intrinsic oscillations of dislocations, which can lead to dislocation motion, has been considered. The length of dislocations, for which the condition of the resonant interaction is fulfilled, has been estimated. It has been shown that the combination of the considered processes can lead to appearance of additional centers of light absorption or scattering, which is manifested in the spectra of optical absorption and photoluminescence of the structures wide-gap semiconductor – oxide film 2015-01-01T00:00:00Z