Semiconductor Physics Quantum Electronics & Optoelectronics

Zn and Mn impurity effect on electron and luminescent properties of porous silicon

2017-06-20T00:02:25Z

Zn and Mn impurity effect on electron and luminescent properties of porous silicon Primachenko, V.E; Kirillova, S.I.; Manoilov, E.G.; Kizyak, I.M.; Bulakh, B.M.; Chernobai, V.A.; Venger, E.F. Investigated in this work are por-Si/n-Si structures prepared by anodizing silicon in 1 % HF water solution, which was followed by natural aging in air and doping with Zn and Mn impurities. When aging, the oxide film of nanoelements in the above structures is substituted by a silicate one. Measurements of temperature dependencies (100...300 K) describing the capacitance photovoltage behavior caused by intense pulses (∼10²¹ quanta/cm2s) of red or white light enabled us to determine the following values and their changes: the boundary potential for n-Si, distribution of the concentration inherent to boundary electron states in the n-Si forbidden gap, concentration of traps for non-equilibrium holes at the interface por-Si/n-Si and in the por-Si layer. The substitution of the oxide film by the silicate one, the thickness of which can exceed the initial thickness of the oxide film, makes these structures more stable and results in sizable changes of spectral dependencies of the short-time (t < 250 ns) and integrated (t > 250 ns) photoluminescence relaxation components as well as shifts the latter into the shortwave range.

Review of monograph

2017-06-20T00:02:22Z

Review of monograph Svechnikov, S.V. Review of monograph: A.A. Akopyan, O. Yu. Borkovskaya, N.L. Dmitruk, A.V. Karimov, R.V. Konakova, V.V. Melenin, A.V. Sachenko, M.N. Tursunov, D.M. Yodgorova. "Photoconverters with AlGaAs/GaAs Heterojunction on Textured GaAs Substrates (Physico-Technological aspects) -Fan Publishers, Tashkent, 2004

Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase

2017-06-20T00:02:24Z

Growing the high-resistive Cd₁₋xZnxTe single crystals from a vapor phase Feychuk, P.; Kopyl, O.; Pavlovich, I.; Shcherbak, L. A modified vapor phase growth method to obtain high-resistive Cd1-xZnxTe single crystals (0 < x < 0.13) is presented. The single crystals (about 25 cm⁻³ in size) with natural faceting were grown by vapor transport in silica ampoules with a special shape using a polycrystalline ingot as initial source material. It is shown that minimization of plastic deformation effect in preparation of the most structurally perfect crystals is possible by a way of heat removal from the crystallization front by radiation. The growth of high-resistive material required careful preparation of the initial charge with close to stoichiometric composition. The obtained crystals were successfully tested for creating the room temperature X-ray and gamma-ray detectors.

Publication Ethics and Publication Malpractice Statement

2017-06-19T05:44:58Z

Publication Ethics and Publication Malpractice Statement